FinFET Transistor Nitrogen-Doped Insulation Leakage Control
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Solution Overview
Problem
Existing FinFETs face severe short channel effects and leakage current issues due to weak gate control over carriers and inadequate heat dissipation, which hinder their ability to meet the performance requirements of advanced ICs as device dimensions shrink.
Innovation Solution
A method involving the formation of nitrogen-doped silicon oxide insulation layers under the fins to inhibit short channel effects and enhance heat dissipation efficiency, comprising etching a semiconductor substrate to form fins, creating insulation trenches, oxidizing the trench sides, doping nitrogen into silicon oxide layers, and filling these trenches with nitrogen-doped silicon oxide to form an insulation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional planar MOS transistors are used, then the device structure is simple, but the control ability to channel regions becomes weak and leakage current increases
Solution Approach 1:
The patent transitions from planar MOS transistors to FinFET structures by introducing a vertical dimension. The fin structure rises from the substrate, creating a three-dimensional channel that allows the gate to control carriers from multiple directions (top and sidewalls), thereby significantly improving control ability and reducing leakage current while maintaining manufacturing feasibility.
Solution Approach 2:
The patent employs composite material structures including high-k dielectric materials combined with metal gates, and nitrogen-doped silicon oxide layers. These composite materials enhance the gate control capability and electrical performance of the FinFET, allowing better suppression of leakage current while maintaining device reliability.
2Productivity
If device dimensions are continuously shrunk, then device density increases, but short channel effects become severe
Solution Approach 1:
By adopting the FinFET vertical channel structure, the patent achieves improved gate control over the channel region without further lateral scaling. The gate wraps around the fin, providing control from top and sidewalls, which suppresses short channel effects even as device dimensions shrink and density increases.
Solution Approach 2:
The patent modifies physical parameters including introducing nitrogen doping into silicon oxide layers to alter electrical properties. The nitrogen doping changes the dielectric characteristics and interface properties, helping to control carrier behavior and mitigate short channel effects in scaled devices.
3Ease of manufacture
If conventional insulation layers are used, then manufacturing is simple, but heat dissipation efficiency is insufficient
Solution Approach 1:
The patent applies nitrogen doping to silicon oxide insulation layers, changing the material's physical and thermal parameters. The nitrogen incorporation modifies the dielectric constant, thermal conductivity, and interface properties, enabling improved heat dissipation while maintaining manufacturing compatibility with existing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces leakage current and improves heat dissipation, enabling FinFETs to meet the performance demands of developing ICs by enhancing control over channel regions and thermal management.
Implementation Method 1
forming first nitrogen-doped silicon oxide layers by doping nitrogen into the silicon oxide layers
Implementation Method 2
The first nitrogen-doped silicon oxide layers and the second nitrogen-doped silicon oxide layers form an insulation layer under the fin to inhibit a short channel effect and increase a heat dissipation efficiency
Data Source
AI summary
The present disclosure provides semiconductor devices, fin field-effect transistors and fabrication methods thereof. An exemplary fin field-effect transistor includes a semiconductor substrate; an insulation layer configured for inhibiting a short channel effect and increasing a heat dissipation efficiency of the fin field-effect transistor formed over the semiconductor substrate; at least one fin formed over the insulation layer; a gate structure crossing over at least one fin and covering top and side surfaces of the fin formed over the semiconductor substrate; and a source formed in the fin at one side of the gate structure and a drain formed in the fin at the other side of the gate structure.