Five-level rectifier modular busbar design for stray inductance reduction
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Solution Overview
Problem
Current high-voltage frequency converters are bulky, costly, and inefficient due to the use of phase-shifting transformers and high-voltage semiconductor components, leading to high energy loss and reliability issues, while existing 2-level converters have inferior maintainability and high manufacturing costs.
Innovation Solution
A five-level rectifier design using modular semiconductor devices connected in series, with a compact structure and reduced stray inductance, featuring a combination of connecting busbars and insulated wires to minimize energy loss and facilitate maintenance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If phase-shifting transformer is used to achieve high-voltage frequency conversion, then high-voltage conversion is achieved, but the system becomes bulky, costly, and associated with more energy loss
Solution Approach 1:
The patent divides the high-voltage frequency conversion system into modular units using series-connected low-voltage IGBT switches. Instead of using a single high-voltage transformer, the system segments the voltage conversion function across multiple switching devices connected in series, each operating at lower voltage but collectively achieving high-voltage output through modular arrangement.
2Power
If phase-shifting transformer is used, then high-voltage frequency conversion is achieved, but the system becomes bulky and costly
Solution Approach 1:
The patent segments the traditional bulky transformer into multiple compact modular units. Each module contains series-connected low-voltage IGBT switches that can be arranged in a compact configuration, eliminating the need for large phase-shifting transformers and reducing overall system volume.
Solution Approach 2:
The patent transitions from a two-dimensional transformer-based architecture to a three-dimensional modular switching network. By arranging series-connected IGBT modules in multiple dimensions and levels, the system achieves high-voltage conversion in a compact space, effectively utilizing spatial arrangement to reduce volume.
3Power
If high-voltage semiconductor component is used to achieve high-voltage frequency conversion, then conversion is achieved, but the system becomes expensive and associated with higher energy loss
Solution Approach 1:
The patent segments the high-voltage conversion function into multiple low-voltage IGBT switching modules connected in series. This segmentation allows the use of inexpensive, readily available low-voltage semiconductor components instead of costly high-voltage devices, while achieving the same high-voltage conversion capability through modular arrangement.
Solution Approach 2:
The patent employs inexpensive low-voltage IGBT switches that can be easily replaced if needed, rather than using expensive high-voltage semiconductor components. The modular design with series-connected low-voltage devices provides a cost-effective solution that sacrifices individual component longevity for overall system affordability and maintainability.
4Ease of manufacture
If 2-level converter with series-connected IGBTs is used, then cost is reduced, but the design layout has inferior maintainability and high manufacturing cost
Solution Approach 1:
The patent segments the bridge arm into modular units with series-connected IGBTs and associated capacitors. Each module is designed as an independent replaceable unit, improving maintainability by allowing targeted replacement of faulty modules rather than entire bridge arms. The modular segmentation enables easier diagnosis and repair while maintaining cost-effectiveness.
Data Source
AI summary
A five-level rectifier includes at least one phase bridge arm that includes an upper-half and a lower-half bridge arm circuit modules. The upper-half bridge arm circuit module includes a first power semiconductor switch unit, a second power semiconductor switch unit, a first diode unit, a second diode unit, a first connecting busbar, a first insulated wire and a first transfer busbar; the lower-half bridge arm circuit module includes a third power semiconductor switch unit, a fourth power semiconductor switch unit, a third diode unit, a fourth diode unit, a second connecting busbar, a second insulated wire and a second transfer busbar. The two modules are disposed side by side and facing each other.