Fixing Electrophoretic Layers on Semiconductor Chips

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Solution Overview

Problem

Existing methods for fixing electrophoretically deposited layers on semiconductor chips lack sufficient mechanical stability, which can lead to damage during production processes such as singulation, adhesive-bonding, or cleaning, especially for radiation-emitting components like LEDs.

Innovation Solution

A method involving the electrophoretic deposition of a wavelength conversion material followed by the application of a matrix material, such as a metal oxide layer, to stabilize and fix the electrophoretic layer on the semiconductor chip, using techniques like PECVD or ALD to ensure mechanical stability and protection against external influences.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If electrophoretic deposition is used to form the wavelength conversion layer, then material utilization efficiency is improved and complex mixing processes are eliminated, but the layer lacks sufficient mechanical stability and can be damaged during production processes

Engineering Contradiction:

Improvematerial deposition processVSAvoidmechanical stability of electrophoretic layer

Core Design Contradiction:

Ease of manufactureVSStrength

Solution Approach 1:

A dispersion medium is introduced as an intermediary substance between the electrophoretically deposited luminophore particles and the external environment. This dispersion medium penetrates and stabilizes the porous electrophoretic layer, providing mechanical strength while maintaining the benefits of electrophoretic deposition. The dispersion medium acts as a binding agent that holds the particles together and protects the layer during subsequent production processes.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Device complexity

If a matrix-free electrophoretic layer is used, then production complexity is reduced and material distribution is improved, but additional scattering or reflection components are required to achieve efficient emission

Engineering Contradiction:

Improvelayer structure complexityVSAvoidemission efficiency

Core Design Contradiction:

Device complexityVSEase of manufacture

Solution Approach 1:

The electrophoretic layer inherently possesses a porous structure due to the particulate nature of deposited luminophore particles. This porous structure is utilized to embed and fix the dispersion medium, creating a stable matrix that provides both mechanical support and optical functionality. The porous structure eliminates the need for additional scattering or reflection components while maintaining efficient light emission.

Inventive Principle:

Principle #31Porous materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively stabilizes the electrophoretic layer, preventing damage during subsequent production steps and enhancing the mechanical and thermal stability of radiation-emitting semiconductor components, while also allowing for efficient emission characteristics without the need for additional scattering or reflection components.

Implementation Method 1

a material is electrophoretically deposited on the surface of the respective semiconductor chip facing away from the carrier substrate, in order to form the electrophoretic layer

Methodology Applied

Scientific EffectElectrophoresis: Electrophoresis

Implementation Method 2

using techniques like PECVD or ALD to ensure mechanical stability and protection against external influences

Methodology Applied

Scientific EffectPlasma Enhanced Chemical Vapour Deposition: Plasma Enhanced Chemical Vapour Deposition

Implementation Method 3

using techniques like PECVD or ALD to ensure mechanical stability and protection against external influences

Methodology Applied

Scientific EffectAtomic Layer Deposition:

Data Source

PatentUS9831390B2Method for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip for the production of a radiation-emitting semiconductor component, and radiation-emitting semiconductor component

Publication Date: 2017.11.28 OSRAM OLED

AI summary

A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.