Flag Generating Circuit for Non-Volatile Memory Reliability
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Solution Overview
Problem
There is a need for ensuring safe and reliable operation of non-volatile memory devices, particularly in automotive electronic control units, where existing technologies lack effective methods to verify the accuracy of program and erase operations.
Innovation Solution
A storage device with a non-volatile memory device, a voltage generating circuit, and a flag generating circuit that outputs a flag signal based on a busy signal and pump enable signal, allowing for real-time monitoring of operation reliability and ensuring accurate program and erase operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If real-time monitoring of operation reliability is implemented, then product reliability is improved, but device complexity increases
Solution Approach 1:
The flag generating circuit is integrated within the non-volatile memory device structure, with the busy signal and pump enable signal pathways already present in the device. The flag signal is generated by combining existing signal pathways through logical operations, nesting the monitoring function within the existing device architecture rather than adding completely separate monitoring hardware.
Solution Approach 2:
The non-volatile memory device generates its own operation status monitoring capability through the flag generating circuit, which uses internally available signals (busy signal and pump enable signal) to produce the flag signal. This self-service approach allows the device to monitor its own operation reliability without requiring external monitoring equipment, thereby improving reliability while minimizing additional complexity.
2Manufacturing precision
If operation verification is performed, then manufacturing precision is improved, but loss of time increases
Solution Approach 1:
The flag signal generation operates continuously during the operation period. The flag generating circuit continuously monitors the busy signal and pump enable signal and generates the flag signal in real-time without interrupting the normal program or erase operations. This continuous monitoring approach ensures operation accuracy is verified throughout the entire process without adding time delays.
Solution Approach 2:
The flag signal provides immediate feedback about the operation status by transitioning from the second level to the first level when the operating voltage reaches the reference voltage while the busy signal is at the first level. This feedback mechanism allows verification of operation accuracy without requiring additional verification time, as the flag signal is generated concurrently with the operation itself.
Data Source
AI summary
A storage device including a non-volatile memory device which receives an operating command and performs an operation corresponding to the operating command, a voltage generating circuit which generates an operating voltage according to the operating command, and a flag generating circuit which receives a busy signal indicative of the non-volatile memory device performing the operation and a pump enable signal instructing pumping of the operating voltage, and outputs a flag signal based on the busy signal and the pump enable signal. The busy signal has a first level when the non-volatile memory device performs the operation, and the flag signal transitions from a second level to the first level in response to the operating voltage becoming equal to or higher than a first reference voltage while the busy signal is at the first level.