Flash Lamp Annealing Chamber Temperature Stabilization
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Solution Overview
Problem
The existing flash lamp annealing process for semiconductor wafers faces challenges in achieving a stable temperature in the in-chamber structures, leading to temperature differences and increased waiting times due to the need for dummy running, which reduces throughput.
Innovation Solution
A heat treatment method and apparatus that uses a continuous lighting lamp to maintain a constant heat-retaining temperature and control the temperature of in-chamber structures by repeatedly turning the lamp on and off, allowing for faster stabilization before processing a product lot.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If dummy running is performed to stabilize the temperature of in-chamber structures, then temperature stability is improved, but processing time increases
Solution Approach 1:
The patent applies preliminary action by performing dummy running before actual wafer processing to pre-stabilize the temperature of in-chamber structures. This preliminary temperature stabilization ensures that when real wafers are processed, the chamber environment is already at the desired temperature, eliminating temperature fluctuations during production and reducing total processing time.
Solution Approach 2:
The patent uses dummy wafers as copies of real wafers to perform preliminary heating cycles. These dummy wafers replicate the thermal characteristics of actual wafers without requiring subsequent processing steps, allowing the system to practice temperature stabilization without consuming valuable production time or materials.
2Stability of the object's composition
If dummy wafers are used for temperature stabilization, then temperature uniformity is improved, but throughput decreases
Solution Approach 1:
The patent employs dummy wafers as disposable objects that are used solely for temperature stabilization purposes. These dummy wafers are inexpensive and can be discarded after serving their purpose of pre-heating and stabilizing the chamber environment, eliminating the need for repeated dummy runs and thereby improving overall throughput.
Solution Approach 2:
By performing the temperature stabilization action preliminarily using dummy wafers before actual production begins, the system ensures temperature uniformity is achieved once, and then can proceed with continuous high-speed processing of real wafers without repeated interruptions for temperature adjustment.
3Manufacturing precision
If sequential processing of wafer lots is performed, then processing precision is maintained, but waiting time increases
Solution Approach 1:
The patent implements continuity of useful action by maintaining the chamber temperature in a stable state through preliminary dummy running, allowing subsequent wafer processing to proceed continuously without interruptions for temperature adjustment. This continuous processing mode maintains manufacturing precision while eliminating waiting periods between wafers.
Solution Approach 2:
The system performs preliminary temperature stabilization before the wafer lot enters the chamber, so that when processing begins, the chamber is already at the optimal temperature. This preliminary preparation eliminates the need for waiting time during the actual processing sequence, allowing continuous high-precision manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the in-chamber structures to reach a stable temperature quickly, reducing waiting times and improving throughput by ensuring uniform temperature history across all wafers in a lot.
Implementation Method 1
irradiating the substrate held by a susceptor in the chamber with light from a continuous lighting lamp
Implementation Method 2
irradiating a surface of a semiconductor wafer with a flash of light, thereby raising the temperature of only the surface of the semiconductor wafer in an extremely short time
Data Source
AI summary
After treatment of a preceding lot is completed, warm up treatment is started. In the warm up treatment, an in-chamber structure such as a susceptor is kept at a constant heat-retaining temperature by light irradiation from a halogen lamp. When a signal to pay out a lot is received while the warm up treatment is performed, the treatment proceeds to conditioning treatment. In the conditioning treatment, the in-chamber structure like the susceptor and so on is temperature-controlled to a stable temperature by repeatedly performing light irradiation on a dummy wafer held on the susceptor, the light irradiation being similar to that performed on a semiconductor wafer included in a lot to be treated. Performing the conditioning treatment after the warm up treatment is performed enables the in-chamber structure to be temperature-controlled to the stable temperature in a short time.