Flash Lamp Array for SiC Wafer Annealing
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Solution Overview
Problem
Flash lamp annealing for silicon carbide (SiC) and gallium nitride (GaN) semiconductor wafers requires higher energy or shorter duration than conventional silicon wafers, leading to heat diffusion issues and accelerated lamp deterioration due to increased peak current.
Innovation Solution
A light irradiation device with multiple flash lamps arranged on a dome-shaped top plate, where the second electrode introducing part intersects the longitudinal axis of each lamp, and the lamps are inclined to widen the interval on the first electrode side, allowing high-intensity light emission without increasing input current, and featuring a power-controllable configuration to extend lamp lifetime.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the amount of energy input to the flash lamp is increased to heat SiC or GaN wafers effectively, then the heating effectiveness is improved, but the peak current increases causing lamp deterioration and reduced lifetime
Solution Approach 1:
The invention divides the single high-energy flash lamp system into multiple lower-energy flash lamps arranged in an array. Each lamp operates at reduced peak current, preventing the lamp deterioration that occurs with high peak current operation, while the collective output of multiple lamps achieves the required total energy input for effective SiC and GaN wafer heating
Solution Approach 2:
Multiple flash lamps are combined in an array configuration where their light outputs are superimposed on the wafer surface. This merging of multiple low-energy sources achieves the cumulative heating effect of a single high-energy source without the harmful peak current effects, extending lamp lifetime while maintaining heating effectiveness
2Manufacturing precision
If the flash lamp annealing is performed in a shorter time to prevent heat diffusion, then the heating precision is improved, but the peak current must be increased which accelerates lamp deterioration
Solution Approach 1:
The flash lamp system is segmented into multiple lamps that can be operated in sequence or simultaneously at reduced power levels. This allows the annealing process to maintain short duration for heating precision while avoiding the peak current surge that would accelerate lamp deterioration
Solution Approach 2:
The multiple flash lamps can be operated in periodic sequences rather than requiring a single high-power pulse. This periodic action maintains the short processing time needed for heating precision while distributing the energy delivery across multiple lower-intensity pulses, reducing peak current stress on individual lamps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables effective high-intensity light emission for SiC and GaN wafer annealing without shortening the flash lamp's operational lifetime, ensuring efficient heat transfer and extended lamp durability.
Implementation Method 1
a light emission surface is provided at a distal end on the second electrode introducing part side of the light-emitting tube of the flash lamp
Implementation Method 2
capable of emitting high-intensity light
Implementation Method 3
heat only the semiconductor surface doped with impurities for a short time of less than or equal to a microsecond
Implementation Method 4
heat is transferred from the surface to deeper regions
Data Source
AI summary
To provide a light irradiation device using a plurality of flash lamps in which a structure that can emit high intensity light as a whole and enables a flash lamp to be used for a practical lifetime without increasing an input current to each lamp is adopted. A light emission surface is provided on a distal end on a second electrode introducing part side of a light-emitting tube of a flash lamp including a first electrode introducing part and the second electrode introducing part, and a plurality of flash lamps are arranged in a standing manner on a top plate of a processing chamber so that the light emission surface faces the inside of the processing chamber.