Flash Lamp Directed Self-Assembly for Defect-Free Substrate Patterns
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Solution Overview
Problem
The directed self-assembly technique for forming patterns on semiconductor wafers is prone to defects, particularly dislocations due to positional displacement of patterns, which limits the formation of finer patterns and is inefficient in terms of cost and time.
Innovation Solution
A substrate processing method involving the deposition of a processing film made of directed self-assembly material, followed by flash irradiation with a flash lamp, preheating at a temperature for phase separation, and irradiation in specific solvents to control pattern line width and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography with short-wavelength light sources (e.g., ArF excimer lasers at 193 nm) is used to achieve finer patterns, then pattern resolution is improved, but manufacturing cost and processing time increase significantly
Solution Approach 1:
The patent changes the fundamental parameter of pattern formation from light-based photolithography to thermally-driven self-assembly. By using flash lamp irradiation to rapidly heat the block copolymer film to temperatures above its glass transition temperature, the system achieves self-organization into fine patterns without requiring short-wavelength light sources, thereby maintaining high resolution while reducing processing time and cost
Solution Approach 2:
The patent replaces the optical-mechanical system of photolithography (light sources, lenses, masks) with a thermal field system. Flash lamp irradiation creates a thermal field that drives the self-assembly of block copolymers, substituting complex optical equipment with simpler thermal processing while achieving comparable or superior pattern resolution
2Manufacturing precision
If EUV exposure or electron beam direct writing is used to achieve patterns finer than 45 nm, then pattern resolution is improved, but manufacturing cost increases significantly
Solution Approach 1:
The patent employs inexpensive flash lamps as the energy source instead of expensive EUV light sources or electron beam systems. The flash lamps are simple, short-lived devices that can be easily replaced, providing a cost-effective alternative to high-end lithography equipment while achieving sub-45 nm pattern resolution through thermal self-assembly
Solution Approach 2:
The block copolymer system performs self-assembly automatically when exposed to thermal energy from flash lamps. The material itself organizes into the desired fine patterns without requiring complex external control systems, expensive equipment, or sophisticated processing steps, thereby dramatically reducing manufacturing cost while achieving high resolution
3Productivity
If directed self-assembly technique is used to achieve finer patterns at low costs and short times, then productivity is improved, but pattern defects (dislocations) increase
Solution Approach 1:
The patent employs periodic flash lamp irradiation to heat the block copolymer film. By controlling the duration and intensity of flash lamp pulses, the system periodically drives the self-assembly process, allowing the material to self-organize into defect-free patterns. The periodic thermal stimulation enables better control over the self-assembly kinetics, reducing dislocations while maintaining fast processing
Solution Approach 2:
The patent optimizes multiple parameters including flash lamp irradiation duration, intensity, and timing to control the self-assembly process. By carefully adjusting these parameters, the system achieves complete self-organization of block copolymers with minimal defects, resolving the contradiction between fast processing and high pattern quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly reduces pattern defects by increasing polymer fluidity and achieving finer patterns than 45 nm, while maintaining low costs and short processing times, with the use of solvents like toluene and tetrahydrofuran enhancing pattern quality.
Implementation Method 1
a flash irradiation step for irradiating the processing film with a flash of light from a flash lamp
Implementation Method 2
irradiating the processing film with a flash of light from the flash lamp increases the fluidity of polymers
Implementation Method 3
the treatment temperature is a temperature at which the directed self-assembly material is phase-separated
Implementation Method 4
the processing film is irradiated with a flash of light in an atmosphere containing at least one solvent selected from the group consisting of toluene, heptane, acetone, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, cyclohexanone, carbon disulfide, and tetrahydrofuran
Data Source
AI summary
A substrate on which a processing film made of a directed self-assembly material is formed is placed on a holding plate incorporating a preheating mechanism, and is preheated. A low oxygen atmosphere surrounds the substrate. A preheating temperature is a temperature at which the directed self-assembly material comprised of two types of polymers is phase-separated. By preheating the processing film, the two types of polymers are phase-separated to form a fine pattern. The processing film is irradiated with flashes of light from flash lamps while being preheated. This increases the fluidity of the polymers constituting the processing film to achieve the formation of a fine pattern while suppressing the occurrence of defects.