Flash Lamp Annealing Circuit for Tail Current Suppression

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Solution Overview

Problem

Existing flash lamp annealing technologies face challenges in achieving short emission times for high-intensity light due to the limitations of insulated gate bipolar transistors (IGBTs), which result in tail currents and reduced cooling rates, and increased stress on the flash lamps, leading to shortened lifespan.

Innovation Solution

Incorporating a gate commutated turn-off thyristor (GCT) in series or parallel with the flash lamp to control the current flow, allowing for precise management of the emission time and reducing tail currents, thereby extending the flash lamp's lifespan and improving cooling efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a high-intensity flash of light is emitted for a short time period to achieve low heat history annealing, then the heating speed and cooling rate are improved, but the required current exceeds the rated current of conventional IGBTs, making the system inoperable

Engineering Contradiction:
Improveheating speedVSAvoidcircuit element rated current
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent changes the switching element parameter from IGBT to GCT thyristor, which has a higher current rating (6000A vs 4000A requirement). This parameter change enables the system to deliver the required high current for short-duration high-intensity flash emission without exceeding component ratings, thereby achieving both fast heating and reliable operation

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the emission time is extended to allow conventional IGBTs to handle the current, then the circuit element reliability is improved, but the cooling rate decreases and heat history increases

Engineering Contradiction:
Improvecircuit element current handlingVSAvoidemission time
Core Design Contradiction:
ReliabilityVSDuration of action of moving object

Solution Approach 1:

By changing the switching element from IGBT to GCT thyristor with higher current capacity, the patent enables shorter emission times (0.1ms or less) while maintaining component reliability. The GCT's higher rated current (6000A) allows the system to deliver sufficient current even during brief emission pulses, thus achieving both reliability and fast cooling requirements

Inventive Principle:
Principle #35Parameter changes

3Loss of time

If the rated current of circuit elements is increased to accommodate large current for short emission time, then the emission time can be reduced, but the device complexity and cost increase

Engineering Contradiction:
Improveemission timeVSAvoidcircuit element specifications
Core Design Contradiction:
Loss of timeVSDevice complexity

Solution Approach 1:

The patent uses a GCT thyristor that can be replaced if needed, accepting the higher initial cost and complexity as a trade-off for achieving the required performance. The system design acknowledges that specialized components like GCTs are more complex but necessary for enabling short-duration high-current operation without compromising reliability

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The GCT thyristor enables efficient suppression of tail currents, allowing for rapid heating and cooling of semiconductor wafers with reduced heat history, while also reducing the stress on the flash lamps, thus enhancing the overall performance and longevity of the heat treatment apparatus.

Implementation Method 1

The light produced by the xenon flash lamps has wavelengths shorter than those of conventional halogen lamps, and almost coincides in fundamental absorption band with semiconductor wafers made of silicon. Thus, when the xenon flash lamp emits a flash of light to the semiconductor wafer, it can rapidly increase the temperature of the semiconductor wafer with less transmitted light.

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Implementation Method 2

Incorporating a gate commutated turn-off thyristor (GCT) in series or parallel with the flash lamp to control the current flow, allowing for precise management of the emission time and reducing tail currents

Methodology Applied
Scientific EffectElectrical conduction control: Conduction (electrical)

Data Source

PatentUS20230290654A1Light-emission heat treatment apparatus
Publication Date: 2023.09.14 SCREEN HOLDINGS CO LTD
  • US20230290654A1 patent drawing
  • US20230290654A1 patent drawing
  • US20230290654A1 patent drawing

AI summary

A flash lamp emits a flash of light to a front surface of a semiconductor wafer held in a chamber to heat the semiconductor wafer. A GCT thyristor is connected in parallel with the flash lamp. After a lapse of a predetermined time period since a current starts to flow through the flash lamp, the GCT thyristor enters an ON state. This allows a discharge current to flow through the GCT thyristor with a smaller impedance, and prevents any current from flowing through the flash lamp. Consequently, a tail current flowing through the flash lamp can be suppressed. Furthermore, reduction in a voltage charged into a capacitor can prevent the life of the flash lamp from being shortened.