Flash Memory Leakage Bit Line Detection and Program Inhibit
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Solution Overview
Problem
Flash memory devices suffer from leakage bit lines, which can lead to inaccurate determination of programmed memory cells and system failures due to the connection of bit lines with adjacent lines, resulting in invalid memory blocks and potential system failures.
Innovation Solution
A method and system for detecting leakage bit lines in flash memory devices, where writing data is updated to include program-inhibit data for affected lines, preventing incorrect programming and system failures by identifying and modifying data corresponding to leakage bit lines as program-inhibit data, thereby preventing memory blocks from being processed as invalid.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If bit lines are floated during test operations to detect programmed memory cells, then measurement precision is improved, but reliability deteriorates due to leakage bit lines causing current leakage and inaccurate detection
Solution Approach 1:
The patent applies preliminary action by detecting leakage bit lines before programming operations begin. The system identifies bit lines with leakage characteristics in advance and stores their addresses in a leakage bit line information table. This preliminary detection prevents subsequent programming errors by ensuring that only non-leakage bit lines are used for data programming, thus resolving the contradiction between measurement precision and reliability.
2Productivity
If programming operations are performed on memory blocks connected to leakage bit lines, then productivity is improved, but reliability deteriorates due to program failures and invalid memory blocks
Solution Approach 1:
The patent extracts and isolates the problematic leakage bit lines from the normal programming operation flow. By detecting leakage bit lines and storing their addresses separately, the system removes them from the set of bit lines available for programming. This extraction ensures that programming operations are performed only on reliable non-leakage bit lines, maintaining both productivity and reliability by preventing program failures.
3Reliability
If error correcting operations are used to handle leakage bit line errors, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent applies preliminary action by preventing errors before they occur rather than correcting them after occurrence. By detecting leakage bit lines in advance and excluding them from programming operations, the system avoids generating errors in the first place. This preventive approach is simpler and more reliable than post-programming error correction, as it eliminates the need for complex error detection and correction mechanisms while maintaining data integrity.
Data Source
AI summary
Provided is a method for programming a flash memory device. The method includes receiving writing data, detecting leakage bit lines of the flash memory device, and updating the received writing data in order for data corresponding to the leakage bit lines to be modified as program-inhibit data. A programming operation is performed on the flash memory device after updating the writing data.