Multi-bit Flash Memory Block Segmentation
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Solution Overview
Problem
Conventional flash memory devices face compatibility issues and increased manufacturing costs due to the inability to efficiently manage data storage in memory blocks with non-power of two page counts, limiting their flexibility and compatibility with different data storage amounts.
Innovation Solution
The implementation of composite NAND strings within memory blocks, where each block comprises multiple types of memory cells capable of storing different numbers of bits, allowing for logical division into a power of two pages, ensuring compatibility with existing control schemes and circuit structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If memory blocks are designed with non-power of two page counts to match different data storage requirements, then storage flexibility is improved, but compatibility with conventional control schemes deteriorates
Solution Approach 1:
The memory block is segmented into multiple memory cell strings with different numbers of memory cells. By dividing the block into strings that can be independently configured, the system can achieve power-of-two page counts for compatibility while maintaining flexibility in total storage capacity through selective activation of strings.
Solution Approach 2:
Different memory cell strings within the same block are assigned different local characteristics (different numbers of memory cells). This allows each string to be optimized for specific storage requirements while the overall block maintains a standardized power-of-two structure for compatibility with conventional control schemes.
2Quantity of substance
If composite memory cell strings with different memory cell counts are used, then data storage capacity is improved, but device complexity increases
Solution Approach 1:
The memory block structure is designed to be universal by incorporating multiple memory cell string configurations that can coexist. The same block structure can support different storage capacities and page counts by selectively activating different strings, eliminating the need for completely different device designs.
Solution Approach 2:
The memory block configuration is made dynamic by allowing flexible activation of different memory cell strings based on storage requirements. The system can adaptively configure which strings are active, enabling variable storage capacity while using a standardized physical structure that reduces complexity.
Data Source
AI summary
A flash memory device includes a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2n pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.