Flash Memory Control with Staged Cell-Current Programming

Solution Overview

Problem

The performance of flash memory in performing matrix-vector multiplication operations, such as those required for machine learning and neural network authentication, is limited by the speed and accuracy of programming processes, which affect the overall efficiency of neural network processing.

Innovation Solution

A method and apparatus that adjust programming time and voltage in a stepwise manner to control the cell current of flash memory cells, using multiple factors to achieve precise programming targets, including primary and secondary targets based on network parameters, to enhance the accuracy and speed of flash memory operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If programming time is increased to improve programming accuracy, then manufacturing precision is improved, but productivity is worsened

Engineering Contradiction:

Improveprogramming accuracyVSAvoidprogramming speed

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The programming process is divided into multiple stages with different target ranges. First programming targets a primary range with larger step size for faster progression, and second programming targets a secondary range with smaller step size for precision. This segmentation allows the system to achieve both speed and accuracy without requiring uniformly long programming time throughout the entire process.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The programming voltage is dynamically adjusted based on the current programming stage and target range. The controller modifies voltage levels during first and second programming phases to optimize the balance between programming speed and accuracy, enabling faster programming in early stages and more precise control in later stages.

Inventive Principle:

Principle #15Dynamics

2Manufacturing precision

If programming voltage is increased to improve cell current variation, then manufacturing precision is improved, but use of energy is worsened

Engineering Contradiction:

Improvecell current control precisionVSAvoidprogramming energy consumption

Core Design Contradiction:

Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The programming voltage is changed based on the current programming stage and target range. During first programming, higher voltage may be used to achieve rapid cell current adjustment within the primary target range. During second programming, voltage is adjusted to finer levels to achieve precise control within the secondary target range. This parameter change strategy optimizes the balance between precision and energy consumption.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The programming voltage is dynamically adjusted based on the current programming stage and target range. The controller modifies voltage levels during first and second programming phases to optimize the balance between programming speed and accuracy, enabling faster programming in early stages and more precise control in later stages.

Inventive Principle:

Principle #15Dynamics

3Manufacturing precision

If multiple programming stages are implemented to improve accuracy, then manufacturing precision is improved, but device complexity is worsened

Engineering Contradiction:

Improveprogramming accuracyVSAvoidprogramming control complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The programming process is divided into multiple stages with different target ranges. First programming targets a primary range with larger step size for faster progression, and second programming targets a secondary range with smaller step size for precision. This segmentation allows the system to achieve both speed and accuracy without requiring uniformly long programming time throughout the entire process.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The controller monitors cell current during programming and uses feedback to determine when to transition between programming stages. Based on whether the cell current satisfies the primary or secondary target, the system automatically adjusts the programming approach, reducing the need for complex manual control while maintaining high precision.

Inventive Principle:

Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the accuracy and speed of flash memory operations, particularly in neural network processing, by narrowing the dispersal of threshold voltage and enhancing the consistency of cell currents, thereby improving the performance of in-memory computing.

Implementation Method 1

Flash memory may store data by adjusting the quantity of electrons present in a charge trapping layer of a memory cell

Methodology Applied

Scientific EffectElectron trapping:

Implementation Method 2

performing first programming on a target memory cell of a cell array while adjusting a first programming time and a programming voltage

Methodology Applied

Scientific EffectElectron injection:

Data Source

PatentUS12374409B2Method and apparatus with flash memory control

Publication Date: 2025.07.29 SAMSUNG ELECTRONICS CO LTD

AI summary

A method and apparatus with flash memory control are provided. The method includes performing first programming on a target memory cell of a cell array while adjusting a first programming time and a programming voltage, when a cell current of the target memory cell is determined to satisfy a primary target in association with the first programming, performing second programming on the target memory cell while adjusting a second programming time, and when the cell current of the target memory cell is determined to satisfy a secondary target in association with the second programming, terminating programming on the target memory cell.