Flash Memory Charge Pump Voltage Generation

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Solution Overview

Problem

Existing flash memory technologies face inefficiencies in generating multiple voltage levels, leading to power wastage and performance sacrifices, particularly in non-volatile memory devices where different voltage levels are required for various operations.

Innovation Solution

A system comprising multiple pumping circuits and a level shifter that allows for the generation of multiple voltage levels by selectively connecting pumping stages, avoiding common connections and threshold voltage losses, with a switch controlled by a level-shifted voltage to manage output communication between charge pump circuitries.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a fixed number of charge pump stages are used to generate voltage levels, then the device complexity is reduced, but the adaptability to different voltage requirements is sacrificed

Engineering Contradiction:

Improvecharge pump structureVSAvoidvoltage level generation

Core Design Contradiction:

Device complexityVSAdaptability or versatility

Solution Approach 1:

The charge pump circuit employs a dynamic stage selection mechanism where different numbers of pumping stages (first, second, third stages) can be selectively activated based on the required voltage level. This dynamic configuration allows the same circuit to adapt to multiple voltage requirements without being fixed to a single stage count, thereby resolving the contradiction between structural simplicity and voltage adaptability.

Inventive Principle:

Principle #15Dynamics

2Device complexity

If voltage divider networks are used to provide different voltage levels from a single charge pump, then the device complexity is reduced, but power wastage increases

Engineering Contradiction:

Improvevoltage generation circuitVSAvoidpower consumption

Core Design Contradiction:

Device complexityVSLoss of energy

Solution Approach 1:

The voltage generation system is segmented into multiple independent charge pump stages that can be selectively activated. Instead of using a voltage divider network that continuously dissipates power, the segmented approach allows only the necessary stages to operate, eliminating power wastage in unused stages while maintaining the ability to generate multiple voltage levels.

Inventive Principle:

Principle #1Segmentation

3Adaptability or versatility

If multiple pumping circuits with switches are used to generate two or more voltage levels, then the adaptability to different voltage requirements is improved, but the device complexity increases due to common connections and threshold voltage losses

Engineering Contradiction:

Improvevoltage level selectionVSAvoidswitching control circuit

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

Multiple pumping stages are merged into a single integrated charge pump circuit rather than using separate pumping circuits. This merging eliminates the need for complex switching control between independent circuits and avoids threshold voltage losses associated with switches. The unified structure maintains adaptability to different voltage levels while reducing overall device complexity.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables efficient generation of multiple voltage levels without power wastage, improving memory operations by allowing unique voltage values for each operation, thus enhancing the reliability and efficiency of flash memory devices.

Implementation Method 1

The first pumping circuit receives the first voltage and produces, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level

Methodology Applied

Scientific EffectCapacitive coupling: Capacitance

Implementation Method 2

The second pumping circuit has an input coupled to the first pumping circuit output for cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage to produce a third voltage at a third voltage level that is higher than the second voltage level

Methodology Applied

Scientific EffectVoltage multiplication:

Data Source

PatentUS8351265B2Power supplies in flash memory devices and systems

Publication Date: 2013.01.08 MOSAID TECH

AI summary

Power supplies in flash memory devices are disclosed. A first section of a flash memory device includes non-volatile memory for storing data. A second section of the flash memory device includes at least first and second pumping circuits. The first pumping circuit receives a first voltage and produces, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level. The second pumping circuit has an input coupled to the first pumping circuit output for cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage to produce a third voltage at a third voltage level that is higher than the second voltage level.