Flash Memory Charge Pumping Circuit with Dynamic Path Control
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Solution Overview
Problem
Existing charge pumping circuits for flash memory programming require large circuit areas and high costs due to the need to account for uncertainty in semiconductor process variations and operating conditions, leading to excessive power consumption.
Innovation Solution
A memory circuit and programming method that generates a pumping voltage and current, using a voltage sensor and switch circuits to monitor and adjust programming paths based on typical conditions, rather than extreme conditions, thereby optimizing power usage and reducing circuit size and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the charge pumping circuit is designed to provide sufficient programming current for all uncertain combinations (worst-case scenario), then the programming reliability is improved, but the circuit area increases and costs increase
Solution Approach 1:
The patent applies dynamics by making the programming path configuration adjustable rather than fixed. Multiple programming paths can be dynamically enabled or disabled based on actual operating conditions. The circuit transitions from a static design that must accommodate all worst-case scenarios to a dynamic design that adapts to actual conditions, thereby reducing the required circuit area while maintaining reliability.
Solution Approach 2:
The patent changes the parameter of programming path configuration from a fixed state to a variable state. By allowing the number and configuration of active programming paths to be adjusted based on actual operating conditions rather than being designed for worst-case scenarios, the circuit area is reduced while programming reliability is maintained through adaptive parameter adjustment.
2Reliability
If the charge pumping circuit is designed to provide sufficient programming current for all uncertain combinations (worst-case scenario), then the programming reliability is improved, but the costs increase
Solution Approach 1:
The patent reduces manufacturing costs by implementing a dynamic programming path selection mechanism. Instead of manufacturing circuits that must handle all worst-case scenarios, the circuit is manufactured with multiple configurable paths that can be dynamically activated based on actual conditions, thereby reducing the required component count and manufacturing complexity.
Solution Approach 2:
The patent changes the operational parameters of the programming circuit from fixed worst-case values to adaptive values based on actual conditions. This parameter change allows for optimized component selection and reduced manufacturing costs while maintaining programming reliability through runtime adaptation rather than over-engineering for all possible scenarios.
3Reliability
If the charge pumping circuit provides high pumping current to ensure programming under all conditions, then the programming reliability is improved, but the power consumption increases
Solution Approach 1:
The patent applies dynamics by enabling adaptive control of programming path activation. Instead of continuously providing high pumping current for all conditions, the circuit dynamically activates only the necessary number of programming paths based on actual operating conditions, thereby reducing power consumption while maintaining programming reliability when needed.
Solution Approach 2:
The patent changes the current provisioning parameter from a fixed high-current mode to a variable current mode. By adjusting the number of active programming paths based on actual conditions, the circuit consumes power proportionally to the actual programming needs rather than continuously operating at maximum current levels, thus reducing overall power consumption while maintaining reliability.
Data Source
AI summary
A memory circuit and a memory programming method adapted to program flash memory are provided. The memory circuit includes a charge pumping circuit, a voltage regulator, a voltage sensor, and a plurality of switch circuits. The charge pumping circuit generates a pumping voltage and a pumping current. The voltage regulator is coupled to the charge pumping circuit and generates a programming voltage and a programming current to program the flash memory according to the pumping voltage and the pumping current. The voltage sensor is coupled to the voltage regulator to monitor a voltage value of the programming voltage. Each of the plurality of switch circuits includes a first terminal coupled to the voltage sensor and a second terminal coupled to the flash memory. A quantity of the plurality of switch circuits that are turned on is determined by the voltage value of the programming voltage.