Flash Memory Configuration Data Read Timing Optimization
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Solution Overview
Problem
The reliability of reading configuration data in flash memory devices is compromised due to process variations and the read disturb phenomenon, leading to errors in DC trim information and other operational settings.
Innovation Solution
The method involves setting a distinct read time for configuration data compared to normal data, regulating the page buffer reset time, bit line precharge time, bit line develop time, and sensing time to differentiate the read operations, and using a read voltage at a ground level or low voltage to prevent errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If configuration data is read using the same read time as normal data, then the reading operation is simple and fast, but the reliability of reading is compromised due to process variations and read disturb phenomenon
Solution Approach 1:
The patent segments the read operation into two distinct modes: normal data read and configuration data read. By separating the read timing parameters for configuration data from those of normal data, the system can apply optimized timing specifically tailored for reliable configuration data retrieval, thereby resolving the contradiction between reading reliability and operational simplicity.
2Reliability
If the read time for configuration data is extended to improve reading reliability, then errors from process variations are reduced, but the read operation takes longer time
Solution Approach 1:
The patent applies local quality by implementing different read time parameters for different types of data. Specifically, configuration data reads use extended timing parameters (tRC configuration, tRAS configuration, tRP configuration) that are optimized for reliability, while normal data reads continue to use standard timing parameters. This localized optimization ensures that time is only extended where necessary for configuration data, resolving the contradiction between reliability and time loss.
3Measurement precision
If normal read timing parameters are used for configuration data, then the read operation is fast, but read disturb phenomenon causes errors in DC trim information
Solution Approach 1:
The patent changes the timing parameters specifically for configuration data read operations. By introducing dedicated timing parameters (tRC configuration, tRAS configuration, tRP configuration) that differ from normal read parameters, the system optimizes the read operation to prevent read disturb phenomenon while maintaining appropriate read speed. This parameter differentiation resolves the contradiction between measurement precision and productivity.
Data Source
AI summary
Provided is a method of reading configuration data in a flash memory device, including a memory cell array which stores configuration data about an operating environment of the flash memory device. The method includes setting a read time of the configuration data to differ from a read time of normal data, and reading the configuration data.