Flash Memory Controller Data Backup for Upper Page Writes
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Solution Overview
Problem
Multi level cell NAND flash memories experience poor data storage reliability due to unstable electronic charges, especially when writing data to upper page addresses, which can lead to data loss and instability in adjacent pages, affecting the reliability of solid state drives.
Innovation Solution
A data writing method that involves copying old data from lower page addresses as a backup before writing new data to upper page addresses in a multi level cell NAND flash memory, ensuring data protection and reliability by maintaining a backup of previous data states.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If new data is written to upper page addresses in multi level cell NAND flash memory, then storage capacity is utilized, but data stability and reliability deteriorate due to unstable electronic charges affecting adjacent pages
Solution Approach 1:
The patent applies preliminary action by copying old data from lower page addresses to a backup location before writing new data to upper page addresses. This preparatory backup ensures that if the subsequent write operation causes instability or failure, the original data can be restored, thus resolving the contradiction between maintaining data stability and utilizing storage capacity.
Solution Approach 2:
The patent implements beforehand cushioning by creating a data backup mechanism that cushions against potential data loss or corruption. By preparing a backup copy of the old data before the write operation, the system provides a safety buffer that protects against the unstable electronic charges inherent in multi level cell NAND flash memory, thereby maintaining reliability while enabling productive use of upper page addresses.
2Quantity of substance
If multi level cell NAND flash memory is used to increase storage capacity, then storage size increases, but data reliability deteriorates due to poor storing reliability from unstable electronic charges
Solution Approach 1:
The patent applies the copying principle by creating a backup copy of old data from lower page addresses before writing new data to upper page addresses. This copying mechanism allows the system to utilize the full storage capacity of multi level cell NAND flash memory while protecting against data loss through maintained copies of original data, thus resolving the contradiction between storage capacity and storing reliability.
3Productivity
If data is written to upper page addresses, then storage utilization improves, but adjacent pages experience instability and data loss
Solution Approach 1:
The patent applies preliminary action by performing a backup copy of old data from lower page addresses before writing new data to upper page addresses. This preliminary backup prevents data loss in adjacent pages by ensuring that original data can be restored if instability occurs during the write operation, thus enabling full storage utilization while preventing information loss.
Data Source
AI summary
A data writing method for a block of a multi level cell NAND flash memory including upper page addresses and lower page addresses is provided, wherein a writing speed at the lower page addresses is higher than that at the upper page addresses. The data writing method includes receiving a writing command and determining whether an address to be written with new data in the writing command is the upper page address of the block. The method also includes copying old data previously recorded on the lower page addresses of the block as an old data backup when the address to be written in the writing command is the upper page address of the block and then writing the new data to the address to be written. Thus, old data may be protected while writing data to the upper page address of the multi level cell NAND flash memory.