Flash Memory Controller Read Success Recording Table

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Solution Overview

Problem

The existing flash memory systems face inefficiencies due to the time-consuming process of searching for suitable read-setting levels, especially in harsh environments where the bit error rate is high, leading to wasted time and reduced processing speed.

Innovation Solution

A flash memory controller with a read-success recording table that prioritizes previously successful read-setting levels, reducing the need to sequentially try all read-setting levels and accelerating the reading process by directly using the most effective voltage settings.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the flash memory controller sequentially reads multiple read-setting levels to find suitable data, then the bit error rate is reduced, but the reading time increases significantly

Engineering Contradiction:
Improvebit error rateVSAvoidreading time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent pre-calculates and stores offset values for different temperature ranges in an offset table before actual reading operations. When reading, the controller only needs to query the offset table based on current temperature and apply the pre-computed offset, rather than sequentially testing multiple read-setting levels. This preliminary preparation eliminates the time-consuming sequential search process while ensuring accurate read settings are applied.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces the mechanical sequential searching process with a direct table-lookup mechanism. Instead of physically iterating through multiple read-setting levels in sequence (mechanical approach), the system uses temperature-based indexing to directly access the appropriate offset value from the offset table (information-based approach), substituting a fast computational lookup for a slow physical search process.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If the flash memory controller uses more read-setting levels to adapt to harsh environments, then the decoding success rate improves, but the complexity of the reading process increases

Engineering Contradiction:
Improvedecoding success rateVSAvoidreading process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent changes the parameter being controlled from the raw read-setting level to a temperature-compensated offset value. By introducing temperature as a key parameter and pre-calculating offsets for different temperature ranges, the system adapts to harsh environments without increasing process complexity. The offset table stores pre-computed parameter adjustments that automatically compensate for environmental variations.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent segments the temperature range into multiple intervals, with each interval having a pre-calculated offset value stored in the offset table. This segmentation allows the system to handle different temperature conditions independently with simple table lookups, rather than using a complex continuous adjustment mechanism. Each temperature segment has its own optimized offset, simplifying the overall control logic.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS11249685B2Method for accessing flash memory module, associated flash memory controller and electronic device for accelerating reading speed of flash
Publication Date: 2022.02.15 SILICON MOTION INC
  • US11249685B2 patent drawing
  • US11249685B2 patent drawing
  • US11249685B2 patent drawing

AI summary

The present invention provides a method for accessing a flash memory module, wherein the flash memory module includes at least one flash memory chip, each flash memory chip includes a plurality of blocks, each clock includes a plurality of pages, and the method includes the steps of: providing a read-retry table, wherein the read-retry table includes a plurality of read setting levels, each read setting level corresponds to at least one read voltage, and no two read setting levels have the same read voltage; establishing a read success recording table, which records at least one specific read setting level that was previously used to successfully read the flash memory module; and when it is required to the read the flash memory module, using the at least one specific read setting level recorded in the read success recording table to read the flash memory module.