Flash Memory Copy Counter for Error Correction
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Solution Overview
Problem
NAND flash memory devices experience reduced performance due to the need for system error-checking and correction algorithms, which increase read and write times by transferring data outside the memory array for error correction, compromising reliability and efficiency.
Innovation Solution
Implementing a method that allows for a threshold-based error correction approach, where data is copied within the memory device without error correction until the threshold is reached, then transferring data to an external controller for correction, thereby balancing performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If error correction algorithms are implemented to ensure data integrity, then reliability is improved, but read and write times increase due to external data transfers
Solution Approach 1:
The patent segments the error correction process by implementing a copy counter that divides data copying operations into multiple phases. Data is copied internally without error correction for a threshold number of times, then external error correction is performed. This segmentation allows the system to balance reliability and speed by applying error correction periodically rather than continuously.
Solution Approach 2:
The patent implements periodic error correction by using a copy counter to track the number of internal copy operations. When the counter reaches a predetermined threshold, the system performs external error correction and then resets the counter. This periodic approach ensures data integrity while minimizing the time spent on error correction operations.
2Productivity
If data is copied multiple times within the memory device without error correction, then write performance is improved, but data reliability deteriorates
Solution Approach 1:
The patent implements a feedback mechanism through the copy counter that monitors the number of internal copy operations. When the counter reaches the threshold value, it triggers external error correction. This feedback loop ensures that while internal copying maintains high write performance, data reliability is periodically verified and corrected when needed.
Solution Approach 2:
The patent changes the operational parameters of the memory system by introducing a threshold-based copy counter. The system dynamically switches between internal copying mode (for performance) and external error correction mode (for reliability) based on the counter value. This parameter change allows optimization of both write performance and data reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances write performance by reducing the need for external data transfers while maintaining high reliability by periodically performing error correction, thus optimizing the trade-off between speed and data integrity.
Implementation Method 1
NAND flash devices, which use Fowler-Nordheim tunneling for both erasing and programming
Data Source
AI summary
An improved flash memory device and method for improving the performance and reliability of a flash memory device is provided. According to one embodiment, a method for writing data to a memory device may include writing the data to a temporary storage location within the memory device before the data is copied to another location within the memory device, incrementing a count value to indicate that the data has been copied, and repeating the step of writing, if the count value is less than a threshold value. If the count value is greater than or equal to the threshold value, the method may write the data to an external memory controller, where the data is checked for errors and corrected if an error is found, before the data is copied to the other location within the memory device.