Flash Memory Die Grouping by Endurance Metric

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Solution Overview

Problem

The endurance of non-volatile memory devices, such as flash memory, varies significantly across different die within the same device due to varying endurance capabilities, leading to a weak link that limits the overall robustness of the memory device.

Innovation Solution

The solution involves obtaining an endurance metric for each die, logically grouping them based on similar endurance metrics, and performing memory operations on a single die group to ensure that data is written in parallel to die with similar endurance levels, thereby managing and optimizing the usage of each die group.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multiple die are used to increase storage capacity, then storage density is improved, but the variability in endurance metrics causes the overall reliability to deteriorate due to the weak link effect

Engineering Contradiction:
Improvestorage capacityVSAvoidendurance robustness
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent segments the plurality of die into multiple die groups based on their endurance metrics. Each die group contains die with similar endurance characteristics, allowing independent management and operation. This segmentation resolves the contradiction by enabling the system to utilize multiple die for increased capacity while managing reliability through targeted group-based operations that prevent the weak link effect.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by tailoring memory operations to specific die groups based on their individual endurance metrics. Different die groups receive different operation patterns customized to their endurance characteristics. This allows the system to maintain high reliability for each local group while achieving overall high capacity through the aggregated performance of all groups.

Inventive Principle:
Principle #3Local quality

2Device complexity

If die with different endurance metrics are operated together, then device complexity is reduced, but the operational lifespan of the memory device deteriorates due to uneven wear

Engineering Contradiction:
Improvemanagement simplicityVSAvoidoperational lifespan
Core Design Contradiction:
Device complexityVSDuration of action of stationary object

Solution Approach 1:

By segmenting die into endurance-based groups, the system maintains relatively simple management through group-level operations while extending operational lifespan. The segmentation enables uniform wear distribution across groups, preventing any single die from becoming a bottleneck that limits overall device lifespan.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements dynamic operation patterns that adapt to the endurance characteristics of different die groups. Operation patterns are adjusted based on group-specific endurance metrics, allowing the system to extend overall operational lifespan by preventing uneven wear accumulation while maintaining manageable complexity through automated group-based control.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS9442662B2Device and method for managing die groups
Publication Date: 2016.09.13 SANDISK TECHNOLOGIES LLC
  • US9442662B2 patent drawing
  • US9442662B2 patent drawing
  • US9442662B2 patent drawing

AI summary

The embodiments described herein methods and devices that enhance the endurance of a non-volatile memory (e.g., flash memory). The method includes obtaining, for each of the plurality of die, an endurance metric. The method also includes sorting the plurality of die into a plurality of die groups based on their corresponding endurance metrics, where each die group includes one or more die and each die group is associated with a range of endurance metrics. In response to a write command specifying a set of write data, the method further includes writing the write data to the non-volatile memory by writing in parallel subsets of the write data to the one or more die assigned to a single die group of the plurality of die groups.