Flash Memory Discharge Circuit Synchronized Voltage Control
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Solution Overview
Problem
The existing discharge circuits in flash memory devices face challenges in controlling the discharge of voltage lines uniformly, leading to different remaining voltages across elements, which can cause large currents and potentially damage the memory device due to varying discharge speeds.
Innovation Solution
The proposed solution involves an integrated circuit with a discharge circuit that includes switch circuits and control voltage suppliers to manage the discharge of well voltage lines and other voltage lines, ensuring synchronized discharge through multiple stages, using a reference voltage to stabilize voltages across all lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional discharge circuits are used without synchronized control, then the discharge process is simple, but different voltage lines discharge at different speeds causing uneven remaining voltages and large currents that may damage the flash memory
Solution Approach 1:
The discharge circuit is segmented into multiple independent discharge paths, each controlled by its own switch circuit (first discharge switch, second discharge switch, third discharge switch). Each switch circuit independently controls the discharge of different voltage lines (well voltage line, first voltage line, second voltage line), allowing synchronized and uniform discharge across all lines, thereby preventing large currents and potential damage while maintaining circuit manageability
Solution Approach 2:
The discharge circuit employs feedback control through control voltage suppliers that monitor and regulate the discharge process. The first control voltage supplier and second control voltage supplier adjust the switch circuits based on the discharge status, ensuring that all voltage lines discharge at uniform speeds and reach stable voltage levels simultaneously, thus preventing harmful voltage differences and current surges
2Speed
If fast discharge is implemented without control, then discharge speed is high, but voltage differences between elements cause large currents and potential damage
Solution Approach 1:
The discharge circuit uses dynamic control through switch circuits that can be independently activated or deactivated based on real-time voltage line status. The switch circuits adjust the discharge paths dynamically, ensuring that faster discharge occurs only when safe, and preventing large currents by controlling the timing and sequence of discharge operations across different voltage lines
Solution Approach 2:
The discharge circuit maintains equipotentiality by using control voltage suppliers to regulate all voltage lines to discharge to the same reference voltage level simultaneously. This ensures that no significant voltage differences exist between different elements during discharge, preventing large currents and potential damage while maintaining high discharge speed
Data Source
AI summary
An integrated circuit is provided. The integrated circuit includes a memory device and a discharge circuit. The discharge circuit discharges the well voltage line and the first voltage line of the memory device after the end of the erasing period and includes a first and second switch circuit and a first and second control voltage supplier. The first switch circuit is coupled between the well voltage line, the first voltage line and a second supplier. The second switch circuit is coupled between the first switch circuit and a reference voltage. The first control voltage supplier is coupled to the first switch circuit and supplies a first control voltage to turn on the first switch circuit during a first discharge period. The second control voltage supplier is coupled to the second switch circuit, and supplies a second control voltage to turn on the second switch circuit during a second discharge period.