Flash Memory Dynamic Block Allocation for Write Speed

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Solution Overview

Problem

Conventional address mapping schemes are inefficient for multi-level cell (MLC) flash memory devices, leading to undesirable writing speeds.

Innovation Solution

A log block mapping scheme is employed, where SLC and MLC blocks are dynamically allocated based on the writing pattern, with SLC blocks used for random-writing patterns and MLC blocks for sequential-writing patterns to enhance buffering speed and storage capacity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If MLC flash memory devices are used to increase storage capacity, then storage capacity is improved, but writing speed deteriorates

Engineering Contradiction:

Improvestorage capacityVSAvoidwriting speed

Core Design Contradiction:

Quantity of substanceVSSpeed

Solution Approach 1:

The flash memory device is segmented into different block types (SLC blocks and MLC blocks) with distinct storage and performance characteristics. The controller dynamically segments the address space and allocates appropriate block types based on writing patterns, allowing the system to leverage both high capacity (MLC) and fast writing (SLC) properties simultaneously

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The system dynamically switches between SLC and MLC block modes based on detected writing patterns. The controller monitors write operations and adaptively selects the optimal block type for each operation, transforming a static memory configuration into a dynamic one that optimizes performance based on actual usage patterns

Inventive Principle:

Principle #15Dynamics

2Device complexity

If conventional log block mapping scheme is used, then address mapping is simplified, but writing speed becomes undesirable

Engineering Contradiction:

Improveaddress mapping complexityVSAvoidwriting speed

Core Design Contradiction:

Device complexityVSSpeed

Solution Approach 1:

The system changes the operational parameters of the log block mapping scheme by introducing pattern detection and adaptive block allocation. Instead of using a fixed mapping approach, the system modifies its behavior based on detected writing patterns, switching between different block allocation strategies to optimize writing speed while maintaining mapping simplicity

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS9886202B2Flash memory device with multi-level cells and method of performing operations therein according to a detected writing patter

Publication Date: 2018.02.06 SAMSUNG ELECTRONICS CO LTD

AI summary

In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.