Flash Memory Local Self-Boosting via Potential Wells
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Solution Overview
Problem
Conventional flash memory devices face challenges in efficiently programming and erasing data due to the breakdown of insulating layers, leading to wear out after a certain number of erase operations, and existing technologies struggle with combining volatile and non-volatile memory modes in a single chip effectively.
Innovation Solution
A local self-boosting method is implemented in flash memory devices, where potential wells and walls are formed at the channel of selected memory cells to enable local voltage boosting during programming, allowing for efficient data programming without the need for low voltages and preventing charge sharing, thereby inhibiting memory cells from programming.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional programming methods are used in flash memory devices, then programming operations can be performed, but insulating layers break down after a certain number of erase operations leading to device wear out
Solution Approach 1:
The patent divides the channel into multiple regions by forming potential walls at specific locations, creating segmented potential wells that confine carriers locally. This segmentation allows independent control of different memory cell regions, enabling selective programming while protecting other regions from excessive stress and insulating layer breakdown.
Solution Approach 2:
The patent applies local quality by creating non-uniform potential distributions through selectively formed potential walls. Different regions of the channel have different potential characteristics - some regions have deep potential wells for carrier confinement during programming, while other regions have potential walls that prevent carrier accumulation and protect insulating layers from breakdown.
2Productivity
If high voltage is applied for programming, then programming efficiency is improved, but charge sharing occurs between adjacent memory cells causing programming errors
Solution Approach 1:
The patent segments the channel potential into isolated wells separated by potential walls. This segmentation prevents charge carriers from spreading to adjacent memory cell regions, eliminating charge sharing effects while allowing high voltage to be applied for efficient programming of the selected memory cells within each potential well.
Solution Approach 2:
The potential walls act as intermediary structures that separate adjacent memory cell regions. These potential barriers prevent direct interaction and charge sharing between neighboring cells while still allowing the programming operation to proceed efficiently within each isolated potential well region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the programming efficiency of flash memory devices by locally limiting and boosting the channel of memory cells, reducing wear and tear on insulating layers and enabling effective combination of volatile and non-volatile memory modes, thus improving the overall performance and longevity of the devices.
Implementation Method 1
forming a potential well at a channel of the string and forming potential walls at the potential well to be disposed at both sides of a channel of a selected one of the memory cells
Implementation Method 2
The channel of the selected memory cell is locally limited by the potential walls and boosted when a program voltage is applied to the selected memory cell
Data Source
AI summary
Provided is a local self-boosting method of a flash memory device including at least one string having memory cells respectively connected to wordlines. The local self-boosting method includes forming a potential well at a channel of the string and forming potential walls at the potential well to be disposed at both sides of a channel of a selected one of the memory cells. The channel of the selected memory cell is locally limited by the potential walls and boosted when a program voltage is applied to the selected memory cell.