Flash Memory Noise Peak Reduction via Serial Programming
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Solution Overview
Problem
The existing flash memory devices experience increased total program time due to instant coupling noise between bit lines, which is exacerbated by the division of flash memory cells into program blocks and the accumulation of time intervals between programming blocks.
Innovation Solution
A flash memory device employing an Incremental Step Pulse Program (ISPP) method with multiple program loops, where the program voltage is increased across loops, and buffer control signals are sequentially activated with decreasing time intervals, reducing noise peaks and the number of program groups.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If flash memory cells are divided into multiple program blocks to reduce noise peak, then noise peak is reduced, but total program time is increased due to accumulation of time intervals
Solution Approach 1:
The flash memory cells are divided into multiple program blocks that are serially programmed to reduce the noise peak. The segmentation allows noise isolation between blocks while maintaining manageable programming operations.
Solution Approach 2:
Multiple program loops are implemented where program voltages are incrementally increased across loops. Within each loop, program blocks are sequentially programmed with controlled time intervals, creating a periodic programming pattern that balances noise reduction with time efficiency.
2Reliability
If program blocks are serially programmed with time intervals to reduce instant coupling noise, then noise is reduced, but the accumulated time intervals increase total program time
Solution Approach 1:
The time intervals between program blocks are dynamically adjusted based on the program loop progression. Earlier loops use longer intervals for noise reduction, while later loops use shorter intervals to minimize total programming time, creating a dynamic timing strategy.
Solution Approach 2:
The program voltage parameter is incrementally changed across multiple loops, with each loop programming different program blocks. This parameter change strategy allows systematic voltage application while managing noise and time trade-offs.
3Manufacturing precision
If multiple program loops with increasing program voltage are used to achieve dense threshold voltage distribution, then programming precision is improved, but program time is extended
Solution Approach 1:
The programming process is segmented into multiple loops, with each loop responsible for programming specific program blocks at a particular voltage level. This segmentation enables systematic voltage application while maintaining precision in threshold voltage distribution.
Solution Approach 2:
The ISPP method maintains continuous useful action by incrementally increasing program voltage across loops without idle periods. Each loop immediately follows the previous one, programming new blocks at higher voltages to continuously progress toward the target threshold voltage distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the total program time by minimizing noise peaks and the number of program groups, thereby enhancing programming efficiency.
Implementation Method 1
The flash memory device is capable of storing data even when no power is supplied. Generally, flash memory cells in the flash memory device are programmed using the tunneling phenomenon.
Data Source
AI summary
A flash memory device reduces noise peak and program time through serial programming of program blocks of memory cells. The time interval or the number of the program groups is decreased according to the proceeding program loop in the plurality of program loops, reducing the total program time.