Flash Memory Output Buffer SDR DDR Mode Switching
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Solution Overview
Problem
Flash memory devices face limitations in reducing the number of pins while maintaining fast data transmission capabilities, which is essential for efficient operation in systems like SSDs and memory modules.
Innovation Solution
The implementation of a unified data fetch scheme using a single data fetch signal (/RWE) and control logic circuitry to discriminate data input/output cycles, allowing for reduced pin count and enabling edge alignment and double data rate modes for synchronized data transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a unified data fetch scheme using a single data fetch signal is implemented, then the number of pins is reduced, but data transmission speed capability is limited
Solution Approach 1:
The patent implements dynamic operation modes where the same single data fetch signal can operate in different modes (SDR mode and DDR mode) depending on the operational requirements. The output buffer circuit can dynamically switch between serial access mode and double data rate mode, allowing the system to adapt its data transmission characteristics without changing the physical pin configuration.
Solution Approach 2:
The patent changes the operational parameters of the data fetch signal by generating a second data fetch signal with different timing characteristics. By delaying the first data fetch signal and creating edge-aligned signals, the system can achieve faster effective data transmission rates (up to 200 MHz) while using the same physical pin, thus resolving the contradiction between pin reduction and speed maintenance.
2Speed
If edge alignment mode is implemented for synchronized data transfer, then data transmission frequency is increased, but control logic complexity increases
Solution Approach 1:
The signal generator performs preliminary action by pre-calculating and pre-positioning the second data fetch signal with the appropriate delay and edge alignment. This preliminary signal preparation allows the output buffer circuit to receive properly timed signals without requiring complex real-time control logic, thus achieving high-frequency data transfer while limiting the increase in control logic complexity.
Data Source
AI summary
A flash memory device including: a memory cell array; a signal generator inputting a first data fetch signal and outputting a second data fetch signal; and an output buffer circuit configured to output data from the memory cell array in sync with rising and falling edges of the second data fetch signal, wherein second data fetch signal is output along with data output from the output buffer circuit.


