Flash Memory Power-On Sequence Voltage Stability Check
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Solution Overview
Problem
Conventional power on sequences for flash memory devices do not ensure stable voltage during initialization, leading to potential instability in reading data from memory cells, which can result in errors.
Innovation Solution
A power on sequence method that applies device voltage and performs an error bit check on memory cells before reading data, ensuring the voltage is stable by determining if it has reached a predetermined minimum level greater than the minimum logic low value, thereby preventing unstable data reads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If data is read immediately after power on reset, then the power on sequence is fast, but the voltage may not be stable enough causing reading errors
Solution Approach 1:
The patent performs a preliminary voltage stability check by reading a test cell before the actual data read operation. This preliminary action verifies that the voltage has stabilized to the minimum logic low value threshold before allowing the main data read to proceed, preventing reading errors while maintaining efficient power-on sequence timing.
2Reliability
If error bit check is performed before reading data, then data accuracy is improved, but the power on sequence time is extended
Solution Approach 1:
The patent applies local quality by performing error bit check only on specific test cells located in a designated area of the memory array, rather than checking all memory cells. This localized approach verifies voltage stability and data integrity at critical locations while minimizing the overall time required for the power-on sequence.
3Reliability
If minimum voltage threshold is set high to ensure stability, then reading accuracy is improved, but the voltage regulation requirement becomes more strict
Solution Approach 1:
The patent implements self-service by having the memory device itself perform the voltage stability verification through the test cell read operation. The device automatically checks whether the applied voltage has reached the minimum logic low value threshold without requiring external voltage regulation circuits or complex monitoring systems, simplifying the overall device architecture while ensuring reading accuracy.
Data Source
AI summary
A method of performing a power on sequence for a flash memory includes applying device voltage to the flash memory and performing an error bit check on at least one memory cell in the flash memory during initial power up. The at least one memory cell in the flash memory is read only after the error bit check determines that the device voltage is stable. The data read from the at least one memory cell is loaded to an information register.