Flash Memory Programming Parameter Segmentation for Cell Lifetime
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Solution Overview
Problem
Flash memory cells in non-volatile memory modules experience rapid degradation and read-disturb errors due to frequent electron injection and removal during programming, leading to incorrect data storage and retrieval, especially for system data stored in flash memory systems.
Innovation Solution
A memory cell programming method that applies different programming parameter sets to write data, with one set used for system data in the system area and another for temporary data in the temporary area, optimizing the number of programming operations and electron control in the charge trapping layer to extend memory cell lifetime and prevent read-disturb.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multiple programming operations are performed on memory cells to store system data, then data storage capacity is improved, but memory cell degradation accelerates and lifetime is reduced
Solution Approach 1:
The memory device is divided into two distinct memory areas: a first memory area for storing system data and a second memory area for storing temporary data. This segmentation allows different programming parameters to be applied to each area, optimizing both data storage capacity and memory cell lifetime by tailoring programming operations to the specific requirements of each memory region.
Solution Approach 2:
Different programming parameters are applied to different memory areas based on their specific usage patterns. The first memory area (system data) uses programming parameters optimized for reliability and longevity, while the second memory area (temporary data) uses parameters optimized for performance and speed. This local quality approach ensures that each memory region operates under conditions that maximize its intended function.
2Productivity
If frequent programming operations are applied to write data to memory cells, then productivity is improved, but read-disturb errors increase and data accuracy deteriorates
Solution Approach 1:
The system dynamically selects different programming parameters based on the type of data being written. When system data is written to the first memory area, programming parameters that prioritize data accuracy and minimize read-disturb errors are applied. When temporary data is written to the second memory area, programming parameters that prioritize programming speed are applied. This dynamic adaptation resolves the contradiction between productivity and reliability.
Solution Approach 2:
The patent changes programming parameters (such as pulse width, voltage levels, and programming cycles) depending on the memory area being written to. By adjusting these parameters, the system can optimize for either speed or accuracy based on the specific writing operation, thereby resolving the contradiction between programming productivity and data accuracy.
3Quantity of substance
If electron quantity in charge trapping layer is increased to enhance storage capacity, then data retention is improved, but read-disturb errors increase due to electron instability
Solution Approach 1:
The charge trapping layer is effectively segmented into two regions corresponding to the two memory areas. The first memory area uses programming parameters that control electron quantity for optimal data retention with minimal read-disturb, while the second memory area uses parameters that allow higher electron quantity for maximum storage capacity. This segmentation allows the system to achieve both high data retention and high storage capacity by applying the appropriate electron quantity control strategy to each region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively lengthens the memory cell lifetime and reduces read-disturb errors by tailoring programming parameters for system and temporary data areas, ensuring accurate data storage and retrieval while minimizing the impact of frequent programming on memory cells.
Implementation Method 1
data writing (also called programming) of the flash memory module is performed by applying a voltage to a specific terminal point, such as controlling the gate voltage to change the electron quantity of a charge trapping layer in the gate
Implementation Method 2
change the electron quantity of a charge trapping layer in the gate, so as to change a conductive state of a channel of the memory cell
Data Source
AI summary
A memory cell programming method for a rewritable non-volatile memory module is provided. The method includes grouping physical erasing units of the rewritable non-volatile memory module at least into a first area and a second area, wherein a first programming parameter set is configured initially for writing a first kind of data into the physical erasing units of the first area and the upper physical programming units of the physical erasing units of the first area are not written with data. The method also includes adjusting the first set of programming parameters to obtain a second programming parameter set, and applying the second set of programming parameters to write a second kind of data into the physical erasing units of the second area, wherein the upper physical programming units of the physical erasing units of the second area are not written with data.