Flash Memory Programming Pulse Width Adjustment for Interference
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Solution Overview
Problem
At high temperatures, memory devices experience significant leak currents that decrease the channel potential of unselected memory cells, leading to program interference due to the fixed pulse width in existing technologies.
Innovation Solution
A method that adjusts the pulse width applied to memory cells based on temperature data, narrowing the pulse as temperature increases, using a memory system with a temperature sensor, controller, and voltage generator to prevent program interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a fixed pulse width is applied to memory cells during program operation, then the program operation can be completed with simple control, but at high temperatures the leak current causes channel potential to decrease significantly leading to program interference in unselected memory cells
Solution Approach 1:
The patent applies dynamics by making the pulse width adjustable based on temperature conditions. The control logic dynamically modifies the pulse width parameter according to the detected temperature, transitioning from a fixed static value to a dynamic value that adapts to environmental conditions. This resolves the contradiction by allowing the system to maintain simple control architecture while achieving reliable program interference prevention through adaptive pulse width adjustment.
Solution Approach 2:
The patent implements parameter changes by modifying the pulse width parameter in response to temperature variations. When temperature exceeds a threshold, the control logic changes the pulse width parameter to a shorter duration, which prevents channel potential degradation and program interference. This parameter adaptation strategy resolves the contradiction between maintaining simple control and achieving reliable operation across different temperature conditions.
2Reliability
If the pulse width is narrowed to prevent program interference at high temperatures, then program interference is reduced, but the program operation time may be affected
Solution Approach 1:
The patent applies parameter changes by adjusting the pulse width parameter based on temperature conditions. At high temperatures, the pulse width is narrowed to prevent program interference, while at normal temperatures, the full pulse width is used to ensure complete programming. This conditional parameter adjustment resolves the contradiction by optimizing both reliability and time efficiency for different operating conditions.
Solution Approach 2:
The patent implements dynamics through temperature-dependent pulse width adjustment. The control logic dynamically determines the appropriate pulse width based on real-time temperature detection, allowing the system to adapt the programming time to actual environmental conditions. This dynamic approach resolves the contradiction by preventing unnecessary time loss at normal temperatures while ensuring interference prevention at high temperatures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the amplitude decrease of the channel potential in unselected memory cells at high temperatures, minimizing program interference and allowing for increased program speed, while maintaining effective interference prevention at lower temperatures.
Implementation Method 1
The temperature sensor is configured to acquire a temperature data of the memory device
Implementation Method 2
The voltage generator is coupled to the address decoder, and configured to generate a pulse provided to the strings of memory cells
Implementation Method 3
a suppression voltage is generally applied to a memory string where unselected memory cells on the same word line are located to make the unselected memory cells have a relatively high channel potential so as to avoid generation of a Fowler-Nordheim (FN) tunneling effect
Data Source
AI summary
A method for programming a memory device and a memory system are provided, wherein the method for programming the memory device includes steps below. First, a program command is proposed. Second, a width of a pulse about to provide to strings of memory cells of the memory device is determined according to a temperature data of the memory device. Then, the pulse is provided to the strings of memory cells to start doing a program operation. The width of the pulse becomes narrower as a temperature of the memory device is raised.