Flash Memory Retention Assessment Using Test Pattern Read Errors

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Solution Overview

Problem

Solid-state non-volatile memory devices face challenges in maintaining data integrity over time due to degradation factors like read disturb, write disturb, and temperature changes, especially when powered off, as existing proactive management is limited to operational hours and may not ensure data availability upon reactivation.

Innovation Solution

An evaluation circuit writes a test pattern to a control set of memory cells, periodically reads it, and determines the data retention time based on read errors, allowing for a data retention policy to be implemented and communicated to a host device for ensuring data integrity, even when the device is not powered.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing proactive management methods are used, then data integrity during operational hours is maintained, but data availability upon device reactivation after extended periods cannot be ensured

Engineering Contradiction:
Improvedata integrityVSAvoiddata retention time
Core Design Contradiction:
ReliabilityVSDuration of action of moving object

Solution Approach 1:

The patent applies preliminary action by performing data retention assessment and identifying blocks at risk of data loss before the device is reactivated after an extended period. The controller proactively evaluates retention characteristics and refreshes or migrates data from vulnerable blocks before they can cause data unavailability, thus ensuring data integrity is maintained even during non-operational periods.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If data is continuously monitored and refreshed, then data integrity is maintained, but device complexity and overhead operations increase

Engineering Contradiction:
Improvedata integrityVSAvoidmanagement overhead
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements self-service by enabling the memory controller to autonomously perform data retention assessment, identify blocks requiring attention, and execute refresh or migration operations without external intervention. The system monitors its own health status and takes corrective actions automatically, reducing the need for complex external management mechanisms while maintaining data integrity.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent applies parameter changes by dynamically adjusting data retention assessment intervals and refresh frequencies based on observed retention characteristics and environmental conditions. Rather than using fixed monitoring schedules, the system adapts its management parameters to actual device behavior, reducing unnecessary operations while maintaining reliability.

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If read operations are performed frequently to monitor data integrity, then data retention assessment is improved, but read disturb effects increase

Engineering Contradiction:
Improveretention assessment accuracyVSAvoidread disturb
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The patent applies partial action by performing retention assessment on a selective basis rather than continuously monitoring all blocks. The controller identifies and assesses only those blocks that are likely to exhibit retention issues based on previous performance, age, and environmental factors, thereby reducing the total number of read operations needed while maintaining adequate assessment accuracy.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS9263158B2Determining data retention time in a solid-state non-volatile memory
Publication Date: 2016.02.16 SEAGATE TECH LLC
  • US9263158B2 patent drawing
  • US9263158B2 patent drawing
  • US9263158B2 patent drawing

AI summary

Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, a test pattern is written to a selected block of solid-state non-volatile memory cells. The test pattern is read from the selected block and a total number of read errors is identified. A data retention time is determined in response to the total number of read errors and an elapsed time interval between the writing of the test pattern and the reading of the test pattern. Data in a second block of the solid-state non-volatile memory cells are thereafter refreshed in relation to the determined data retention time.