Flash Memory Data Retention Detection and Block Isolation

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Solution Overview

Problem

Data stored in flash memory devices becomes less reliable over time due to charge leakage and shifting threshold voltages, leading to errors and potential data corruption, especially in multi-level cell (MLC) blocks, which can result in data loss if not managed properly.

Innovation Solution

A data retention detection technique that monitors error rates in blocks of a data storage device, setting a flag when a threshold is exceeded, allowing the controller to close the block to further write operations, thereby isolating stressed data and using a common set of parameters for reading, reducing latency and preventing data corruption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If data is stored in flash memory blocks over time, then storage capacity is utilized, but data reliability deteriorates due to charge leakage and threshold voltage shifting

Engineering Contradiction:
Improvestorage capacityVSAvoiddata reliability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The system performs preliminary detection of data retention status by monitoring error rates in reference pages before data corruption becomes critical. The controller periodically senses reference pages and compares error rates to detect degradation trends, allowing preventive action to be taken before data becomes unrecoverable.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system extracts and isolates stressed blocks from the active storage pool by closing blocks to write operations when retention degradation is detected. This separates degraded data from healthy data, preventing further writes to stressed blocks while preserving access to reliable blocks.

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If blocks are closed to write operations to prevent data corruption, then data integrity is improved, but write productivity is reduced

Engineering Contradiction:
Improvedata integrityVSAvoidwrite productivity
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The storage device is segmented into multiple blocks, and the system applies selective closure only to specific blocks that show retention degradation. Healthy blocks remain open for normal write operations, while only stressed blocks are closed. This segmented approach minimizes the impact on overall write productivity while protecting data integrity in affected areas.

Inventive Principle:
Principle #1Segmentation

3Measurement precision

If separate parameter sets are used for stressed and new data, then data accuracy is improved, but access latency increases

Engineering Contradiction:
Improvedata accuracyVSAvoidaccess latency
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The system extracts and isolates stressed data from the block, separating it from new data that can be written. By closing blocks to write operations, the system ensures that only one set of read parameters is needed for each block, eliminating the complexity of managing multiple parameter sets and reducing access latency.

Inventive Principle:
Principle #2Taking out (Extraction)

4Reliability

If error rates are monitored continuously to detect retention degradation, then data reliability is improved, but device complexity increases

Engineering Contradiction:
Improvedata retention monitoringVSAvoidmonitoring complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Instead of monitoring all data blocks continuously, the system applies partial monitoring by selecting representative reference pages from each block and monitoring error rates only in those reference pages. This partial action provides sufficient insight into block retention status without the complexity of comprehensive continuous monitoring of all data.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS9165670B2Data retention detection techniques for a data storage device
Publication Date: 2015.10.20 SANDISK TECHNOLOGIES LLC
  • US9165670B2 patent drawing
  • US9165670B2 patent drawing
  • US9165670B2 patent drawing

AI summary

A data storage device includes a non-volatile memory and a controller. A method includes writing an indication of a first error rate of a first set of bits to the non-volatile memory. The first set of bits is sensed from a word line of the non-volatile memory. The word line is sensed to generate a second set of bits in response to a first power-on event being initiated at the data storage device after writing the indication of the first error rate to the non-volatile memory. The method further includes setting a data retention flag in response to a difference between the first error rate and a second error rate associated with the second set of bits satisfying a threshold.