Flash Memory Bit Line Sensing via Segmented Even Odd Phases
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Solution Overview
Problem
Flash memory devices face performance limitations due to bit line to bit line interaction, particularly in shielded bit line sensing methods, which result in slower sensing operations.
Innovation Solution
The method involves sensing even bit lines separately from odd bit lines while floating the deselected bit lines, reducing the effects of bit line capacitance and potentially doubling the speed of sensing operations compared to shielded bit line sensing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If shielded bit line sensing is used to reduce bit line interaction, then sensing accuracy is improved, but sensing speed deteriorates
Solution Approach 1:
The bit line sensing operation is segmented into two separate phases: even bit line sensing and odd bit line sensing. By dividing the sensing operation into discrete segments that can be executed independently and in parallel, the system achieves both accurate sensing (through dedicated sensing phases) and improved speed (through parallel execution of even and odd bit line sensing)
Solution Approach 2:
The sensing operation uses periodic alternating action between even and odd bit lines. The system periodically switches between sensing even bit lines and odd bit lines in a rhythmic sequence, allowing each bit line type to be sensed with dedicated attention while maintaining high overall throughput through the periodic alternation pattern
2Productivity
If all bit lines are sensed simultaneously (ABL sensing), then productivity is improved, but bit line interaction causes measurement precision to deteriorate
Solution Approach 1:
The simultaneous sensing of all bit lines is segmented into separate even and odd bit line sensing operations. This segmentation eliminates the harmful interactions that occur when all bit lines are sensed at once, while still maintaining high productivity by executing the segmented operations in parallel rather than sequentially
Data Source
AI summary
A method for reading an array of memory cells includes enabling a current to flow through even data lines of the array of memory cells. The method includes blocking a current from flowing through odd data lines of the array of memory cells. The method includes sensing data stored in memory cells coupled to the even data lines.