Flash Memory Programming Source Line Floating
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Flash memory devices face inefficiencies in power usage during programming operations due to leakage currents caused by close voltage configurations between memory cells, which degrade performance and reduce the number of bits that can be programmed.
Innovation Solution
The technique involves floating select source bit lines based on a data pattern during multi-bit programming operations to maximize the distance between source and drain voltages, thereby minimizing leakage current and optimizing power usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple memory cells are programmed simultaneously, then programming productivity is improved, but power consumption increases due to leakage currents from close voltage configurations
Solution Approach 1:
The patent applies dynamics by making the source bit line voltage configuration adaptive rather than static. The control logic dynamically selects which source bit lines to float versus ground based on the specific programming pattern being written, allowing the system to optimize its voltage configuration for each programming operation to minimize leakage current while maintaining high programming throughput
Solution Approach 2:
The patent applies local quality by differentiating the voltage treatment of different source bit lines based on their specific programming needs. Instead of applying a uniform voltage configuration to all source bit lines, the control logic selectively floats only those source bit lines that will be used in the current programming operation, while grounding others, thereby minimizing leakage current in non-programming regions while enabling programming in active regions
2Ease of operation
If source bit lines are grounded for all cells, then programming operation is simplified, but leakage current increases due to close voltage distance between source and drain
Solution Approach 1:
The patent transforms the static grounding approach into a dynamic selective configuration. The control logic evaluates the programming pattern and dynamically determines which source bit lines should be floated versus grounded, creating an adaptive voltage configuration that minimizes leakage current while maintaining programming simplicity through automated control
Solution Approach 2:
The patent changes the voltage parameter configuration of source bit lines from a fixed grounded state to a variable state that can be either floated or grounded based on programming requirements. This parameter change allows the system to optimize the voltage distance between source and drain for each specific programming operation, reducing leakage current while maintaining ease of operation through control logic automation
Data Source
AI summary
Techniques for programming a non-volatile memory device, such as a Flash memory, include floating source lines of memory cells based on a data pattern that is being programmed to the memory device. The source lines to float are selected such that a distance between drain bit lines and source bit lines of different memory cells in a row is maximized. In this manner, leakage current between these drain bit lines and source bit lines can be decreased.