Flash Memory Error Correction With Syndrome Re-Verification

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Solution Overview

Problem

Multi-level cell (MLC) flash memory systems face unstable data security and high error bit probabilities due to reduced noise margins, which challenges the error correction capabilities of existing codes like BCH, especially when the number of bits stored in a single cell increases, leading to errors beyond the maximum correction capability.

Innovation Solution

The proposed method involves an operation method for a flash memory system that includes obtaining first syndrome values, determining error locations, error-correcting codewords by flipping bit values, and performing subsequent syndrome operations to verify error correction, with the option to restore the codeword by re-flipping bit values when errors are detected, utilizing algorithms like Berleykamp-Massey and Chien search for efficient error location and correction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the number of bits stored in a single MLC increases to reduce production cost per bit, then manufacturing cost decreases, but error bit probability increases

Engineering Contradiction:
Improveproduction cost per bitVSAvoiderror bit probability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The error correction process is segmented into multiple stages: first syndrome calculation, error location identification, error correction, second syndrome calculation, and conditional restoration. This segmentation allows the system to handle different error scenarios systematically, correcting correctable errors while identifying and restoring incorrectly corrected errors, thereby maintaining reliability in multi-bit MLC storage.

Inventive Principle:
Principle #1Segmentation

2Reliability

If BCH code error correction capability is increased to handle more error bits, then reliability improves, but device complexity increases

Engineering Contradiction:
Improveerror correction capabilityVSAvoiddecoder complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The system performs a first syndrome calculation before error correction to identify error locations. After correction, a second syndrome calculation is performed to verify whether the correction was successful. This preliminary and verification action prevents incorrect corrections from propagating, enabling reliable error correction without requiring overly complex decoder designs.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The second syndrome calculation acts as a feedback mechanism to verify the success of error correction. If the second syndrome indicates remaining errors, the system restores the original codeword, preventing incorrect data from being processed further. This feedback loop ensures reliability while maintaining manageable decoder complexity.

Inventive Principle:
Principle #23Feedback

3Productivity

If error correction is performed by flipping bit values based on error locations, then error correction efficiency improves, but harmful factors increase when errors exceed maximum correction capability

Engineering Contradiction:
Improveerror correction efficiencyVSAvoiderroneous operations generating more errors
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The second syndrome calculation provides feedback to verify whether error correction successfully eliminated all errors. When the second syndrome indicates remaining errors, the system identifies that the error count exceeded the correction capability and restores the original codeword, preventing harmful erroneous operations from propagating.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system performs preliminary verification through second syndrome calculation before accepting corrected data. This preliminary anti-action prevents incorrectly corrected data from being processed, counteracting the potential harmful effect of erroneous bit flips when errors exceed correction capability.

Inventive Principle:
Principle #9Preliminary anti-action

Data Source

PatentUS9619327B2Flash memory system and operating method thereof
Publication Date: 2017.04.11 SK HYNIX INC
  • US9619327B2 patent drawing
  • US9619327B2 patent drawing
  • US9619327B2 patent drawing

AI summary

An operation method of a flash memory system includes: obtaining first syndrome values to a codeword; obtaining locations of errors and the number of the locations of errors based on the first syndrome values; error-correcting the codeword by flipping bit values of error bits of the codeword based on the locations of errors to generate an error-corrected codeword; obtaining second syndrome values to the error-corrected codeword; determining whether an error is found in the error-corrected codeword based on the second syndrome values; changing the first syndrome values when it is determined that no error is found in the error-corrected codeword; and restoring the error-corrected codeword to the codeword by re-flipping the flipped bit values when it is determined that an error is found in the error-corrected codeword.