Flash Memory Read Sensing for Valley Voltage Detection
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Solution Overview
Problem
Existing flash memory technologies face challenges in achieving high reading and writing speeds, low power consumption, and extended service life, particularly in consumer electronics, where performance and reliability are increasingly demanded.
Innovation Solution
A method of operating memory cells by performing sensing operations with varying development durations and read voltages, dividing cells into groups, and using page buffers with latch circuits to optimize data acquisition and minimize errors due to charge loss, thereby enhancing the accuracy and speed of data reading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a single read voltage is used for sensing operations, then the operation is simple, but reading accuracy deteriorates due to charge loss in memory cells
Solution Approach 1:
The patent applies dynamics by making the read voltage variable rather than fixed. The system dynamically adjusts the read voltage based on the sensing development duration: using a first read voltage for short durations and a second read voltage for long durations. This dynamic adaptation resolves the contradiction by allowing the system to maintain high reading accuracy across different time conditions while managing operational complexity through systematic voltage selection
Solution Approach 2:
The patent changes the voltage parameter based on the sensing development duration. By establishing a correspondence between time duration and voltage level (short duration → first read voltage, long duration → second read voltage), the system optimizes reading accuracy for each temporal condition. This parameter change strategy directly addresses the charge loss problem while maintaining manageable operational complexity through predefined voltage selection rules
2Measurement precision
If multiple sensing operations are performed with different development durations, then reading accuracy is improved, but the time required for data acquisition increases
Solution Approach 1:
The patent applies partial action by performing sensing operations selectively rather than exhaustively on all memory cells. The system divides memory cells into groups and performs sensing operations on subsets of cells with different development durations. This approach achieves sufficient reading accuracy for the entire memory array while significantly reducing the total data acquisition time compared to performing exhaustive sensing on every cell
Solution Approach 2:
The patent segments the memory cell array into multiple groups (first, second, third memory cell groups) and performs sensing operations on different segments with different development durations. This segmentation allows parallel or sequential processing of cell groups, improving overall reading accuracy while managing time consumption through divided-and-conquer methodology
3Measurement precision
If sensing operations are performed on all memory cell groups with the same development duration, then the process is simple, but reading accuracy deteriorates due to charge loss variations
Solution Approach 1:
The patent applies local quality by assigning different sensing development durations to different memory cell groups based on their specific characteristics or positions. The first memory cell group uses a first development duration, while the second and third groups use different durations. This localized differentiation addresses charge loss variations in different regions, improving overall reading accuracy while maintaining reasonable operational complexity through systematic group-based management
Data Source
AI summary
The present application provides methods of operating memories, memories and memory systems. An example method includes: at a first reading period, performing a sensing operation on memory cells based on a first read voltage, a sensing development duration for the sensing operation performed on the memory cells being not shorter than a first development duration. Based on different sensing development durations, at a first sensing period and a second sensing period of the first reading period, a number of first memory cell, a number of second memory cell and a number of third memory cell are obtained. Based on the number of first memory cell, the number of second memory cell and the number of third memory cell, a valley voltage between a first threshold voltage distribution range and a second threshold voltage distribution range is determined.