Flash Memory Voltage Control Circuit for Secure Data Destruction
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Solution Overview
Problem
Existing flash memory devices require a customization motherboard with a circuit to generate high voltage for physical destruction, incurring significant hardware costs for users needing secure data destruction.
Innovation Solution
A flash memory device equipped with a voltage control circuit that includes a boost converter and a buck converter, capable of generating high voltage for destroying semiconductor elements, and a voltage controller to switch between normal operation and destruction modes using feedback signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a customization motherboard with external high-voltage generation circuit is used, then physical destruction capability is achieved, but hardware establishment cost increases significantly
Solution Approach 1:
The patent merges the high-voltage generation circuit into the flash memory device itself, combining previously separate functions (data storage and destruction capability) into a single integrated device. This eliminates the need for external customization motherboards while maintaining physical destruction capability through internal high-voltage generation circuits.
Solution Approach 2:
The flash memory device is designed with multi-functionality, serving both as a data storage device and a self-destructive security device. The integrated voltage control circuit enables the device to perform normal operation at low voltage and physical destruction at high voltage, making it universally applicable without requiring separate destruction hardware.
2Reliability
If external high-voltage circuit is provided in computer host, then data security is ensured, but device complexity increases
Solution Approach 1:
The patent extracts the high-voltage generation capability from the external computer host environment and relocates it directly into the flash memory device. This removes the complexity of configuring customization motherboards and external circuits in the computer host, while maintaining data security through the device's inherent self-destruct capability.
Solution Approach 2:
The flash memory device becomes self-sufficient by incorporating its own high-voltage generation circuitry, enabling it to perform physical destruction independently without requiring external assistance from the computer host. The device serves its own security needs through integrated voltage control circuits that can autonomously generate destructive high voltage.
3Ease of manufacture
If voltage control circuit is integrated in flash memory device, then hardware cost is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent utilizes parameter changes in voltage levels to achieve different operational modes. By controlling the voltage output of the integrated circuit between low levels (normal operation) and high levels (physical destruction), the system achieves multiple functions through a single integrated structure, reducing manufacturing complexity despite the precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables secure and cost-effective physical destruction of semiconductor elements within the flash memory device without the need for external hardware, reducing hardware establishment costs and ensuring data security.
Implementation Method 1
a boost converter receiving a system voltage and generating a first high voltage
Implementation Method 2
a buck converter connected to the controller, the flash memories, and the boost converter, wherein the buck converter receives the first high voltage, and generates an output voltage provided to the controller and the flash memories
Implementation Method 3
the semiconductor physical elements of the controller and the flash memories can be destroyed by the use of the high voltage
Data Source
AI summary
A flash memory device. The flash memory device comprises a controller, a plurality of flash memories, and a voltage control circuit. The voltage control circuit comprises a boost converter, a buck converter, and a voltage controller. The boost converter receives a system voltage to generate a first high voltage. The buck converter receives the first high voltage and provides an output voltage to the controller and the flash memories. The voltage controller detects the output voltage generated by the buck converter, and therefore generates a feedback signal. When the voltage controller receives a physical destruction control signal from a host computer, the buck converter will generate an output signal with high level according to the control of the feedback signal. Afterwards, semiconductor physical elements of the controller and the flash memories will be burned by the output signal with high level.