Flash Memory Voltage Control Circuit for Power and Reliability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional flash memory devices experience unnecessary power consumption and potential damage to high voltage transistors due to maintaining a high voltage level regardless of the program voltage during programming operations, leading to inefficient energy use and transistor stress.
Innovation Solution
A flash memory device with a high voltage generation circuit that maintains a defined voltage difference between the high voltage and program voltage by using a high voltage control circuit and a program voltage control circuit, both operating in response to a control code, ensuring the high voltage and program voltage are incrementally increased simultaneously to maintain optimal voltage levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the high voltage is maintained at a high level regardless of the program voltage during programming operations, then the programming operation can be performed, but unnecessary power consumption occurs and high voltage transistors may be damaged
Solution Approach 1:
The patent implements dynamic voltage adjustment by controlling the high voltage to track the program voltage level. The high voltage is no longer fixed but is dynamically adjusted based on the program voltage requirements, ensuring the voltage difference remains within safe limits while maintaining programming functionality. This resolves the contradiction by making the voltage system adaptive rather than static.
Solution Approach 2:
The patent employs feedback control where the high voltage is adjusted based on the program voltage level. The control circuit monitors the program voltage and accordingly adjusts the high voltage to maintain an appropriate voltage difference, preventing both excessive power consumption and transistor damage. This feedback mechanism ensures reliable operation while optimizing energy usage.
2Productivity
If the high voltage is maintained at a high level regardless of the program voltage, then the programming operation can be performed, but unnecessary power consumption occurs
Solution Approach 1:
The high voltage is dynamically adjusted to match the program voltage requirements rather than being maintained at a fixed high level. This dynamic adjustment ensures programming operations can proceed effectively while minimizing energy waste from maintaining unnecessarily high voltages during all programming stages.
Solution Approach 2:
The patent changes the voltage parameter dynamically based on programming progress. By adjusting the high voltage level according to the program voltage and programming stage, the system maintains productivity while significantly improving energy efficiency and reducing unnecessary power consumption.
3Productivity
If the voltage difference between high voltage and program voltage is too high, then programming can be performed, but high voltage transistors may be damaged
Solution Approach 1:
The control circuit uses feedback to monitor the program voltage and adjust the high voltage accordingly, ensuring the voltage difference remains within safe limits. This prevents excessive voltage stress on transistors while maintaining sufficient voltage difference to enable programming operations, thus protecting components without sacrificing productivity.
Solution Approach 2:
The patent implements protective control that prevents excessive voltage difference before damage can occur. By controlling the high voltage to track the program voltage and maintain an appropriate voltage difference, the system cushioning protects transistors from voltage stress that could cause damage, while still enabling effective programming operations.
4Use of energy by moving object
If the voltage difference between high voltage and program voltage is too low, then power consumption is reduced, but the high voltage transistors may not be turned ON and program voltage will not be provided to word lines
Solution Approach 1:
The feedback control mechanism ensures the voltage difference between high voltage and program voltage is maintained at an optimal level. This feedback ensures transistors receive sufficient voltage to turn ON properly and function correctly, while avoiding excessive voltage differences that would waste power, thus balancing energy efficiency with operational reliability.
Solution Approach 2:
The dynamic voltage adjustment ensures the voltage difference is optimized for transistor operation. By continuously adapting the high voltage to the program voltage level, the system maintains sufficient voltage difference for proper transistor switching while minimizing unnecessary power consumption, achieving both energy efficiency and operational ease.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents excessive power consumption and reduces the risk of transistor damage by maintaining a stable voltage difference between the high voltage and program voltage, ensuring efficient and safe operation during programming operations.
Implementation Method 1
a charge pump, a high voltage control circuit controlling the charge pump to provide the high voltage
Data Source
AI summary
Provided are a flash memory device and method of controlling certain program operation voltages. The flash memory device includes a high voltage generation circuit providing a high voltage to a block selection circuit and a program voltage to a row decoder. The high voltage generation circuit includes a charge pump, a high voltage control circuit controlling the charge pump to provide the high voltage, and a program voltage control circuit providing the program voltage in relation to the high voltage, wherein the high voltage control circuit and the program voltage control circuit operate in response to the same control code.