Dynamic Programming Mode Selection for Flash Memory Wear
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Solution Overview
Problem
In rewritable non-volatile memory modules, particularly MLC NAND flash memory, continuous use of physical erasing units leads to uneven erase counts, causing them to reach their limit faster and reducing the module's lifetime.
Innovation Solution
A data programming method that divides physical erasing units into two types with different programming modes, dynamically selecting units based on usage parameters to distribute data storage and prevent excessive wear, thereby improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If physical erasing units are continuously used to store data, then programming speed is improved, but erase counts reach upper limit faster and reliability deteriorates
Solution Approach 1:
The patent divides physical erasing units into multiple groups (first group, second group, third group) based on their erase count status. This segmentation allows the system to manage worn units separately from fresh units, enabling continuous operation while distributing wear across all groups over time, thus maintaining both programming speed and reliability.
Solution Approach 2:
The patent implements dynamic group switching where the memory controller can switch between different groups of physical erasing units based on current usage patterns and erase count thresholds. This dynamic allocation ensures that no single group is overused, balancing programming throughput with long-term reliability by adaptively managing resource distribution.
2Reliability
If physical erasing units are divided into different groups with different programming modes, then reliability is improved, but device complexity increases
Solution Approach 1:
Different programming modes are applied to different groups of physical erasing units based on their specific wear status. First group units use one programming mode while second and third group units use another mode. This localized quality adjustment optimizes reliability for each group's condition without requiring complete system redesign, managing complexity through targeted differentiation.
Solution Approach 2:
The patent changes programming parameters (programming mode) based on the group to which physical erasing units belong. By adjusting programming parameters according to erase count thresholds and group classifications, the system achieves improved reliability through parameter optimization rather than structural complexity, keeping the management approach manageable.
Data Source
AI summary
A data programming method, a memory storage device and a memory control circuit unit are provided. The method includes presetting a programming mode of a plurality of first type physical erasing units as a first programming mode, and presetting a programming mode of a plurality of second type physical erasing units as a second programming mode. The method also includes obtaining a change parameter according to usage parameters of the first type physical erasing units and the second type physical erasing units. The method further includes determining whether the change parameter matches a first change condition, and if the change parameter matches the first change condition, programming a write-data into the second type physical erasing unit by using the first programming mode.