Flash Sector Configure Registers for Virtual Ground Decoding
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Solution Overview
Problem
Conventional flash memory devices are limited by their hard-coded single decode mechanism and sector-level erasure, which restricts storage and programming to a single direction, preventing byte alterability and efficient data management.
Innovation Solution
The implementation of sector configure registers that allow selection of multiple virtual ground decoding schemes, including dual bit decoding and single program and erase entity decoding, enabling dual bit high-density storage and EEPROM emulation in a single flash device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional flash memory uses a hard-coded single decode mechanism, then the device structure is simple, but the storage density and programming flexibility are limited
Solution Approach 1:
The patent implements dynamic configurability by introducing sector configure registers that allow the flash memory device to switch between different decoding schemes (dual bit decoding and single program and erase entity decoding) based on operational requirements. This transforms the hard-coded static architecture into a dynamic system that can adapt its decoding mechanism, thereby resolving the contradiction between versatility and structural simplicity.
2Ease of operation
If conventional flash memory uses sector-level erasure, then the device structure is simple, but byte alterability and data management efficiency are prevented
Solution Approach 1:
The patent applies segmentation by dividing the memory into sectors with configurable erasure granularity. The sector configure registers enable each sector to be independently configured for either traditional sector-level erasure or finer-grained byte-level alterability. This segmentation approach allows selective application of different erasure granularities across different memory regions, achieving byte alterability without requiring complete redesign of the erasure mechanism.
3Adaptability or versatility
If conventional flash memory uses a single decoding scheme, then the device complexity is low, but dual bit high density storage and EEPROM emulation cannot coexist
Solution Approach 1:
The patent implements multi-functionality through sector configure registers that enable a single flash memory device to support multiple storage methodologies simultaneously. Different sectors can be configured to operate in dual bit decoding mode for high-density storage while other sectors operate in single program and erase entity decoding mode for EEPROM emulation. This universal approach allows the device to perform multiple functions without requiring separate dedicated hardware for each function.
Data Source
AI summary
Flash memory systems and methodologies are provided for providing multiple virtual ground decoding schemes in a flash device. The flash device can include sector configure registers for selecting a specific ground scheme at sector level. The sector configure registers can select a decoding scheme from multiple virtual ground decoding schemes including a conventional dual bit decoding scheme and a single program and erase entity decoding scheme. Since the single program and erase entity decoding scheme can emulate EEPROM functionality in a flash device, the combination of the conventional dual bit decoding scheme and the single program and erase entity decoding scheme can provide both dual bit high density storage and EEPROM emulation in a single flash device.