Flash Memory Voltage Generation Circuit Early Pulse Output
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Solution Overview
Problem
The NOR type flash memory devices experience slow programming and erase speeds due to the requirement for high voltages, which increases program time and degrades performance, as the conventional voltage generation circuit outputs incremental step pulses only after the internal power voltage reaches its maximum value.
Innovation Solution
A voltage generation circuit that includes a high voltage generator, a word line voltage regulator, and a column selection voltage switch, which outputs an incremental step pulse as a word line program voltage before the internal power voltage reaches its maximum value, and provides a column selection voltage based on the internal power voltage, reducing the delay time and program time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the conventional voltage generation circuit waits for the internal power voltage to reach its maximum value before outputting incremental step pulses, then the high voltage is stable and reliable for programming, but the program time increases and performance degrades
Solution Approach 1:
The patent applies preliminary action by starting to output incremental step pulses to the word line before the internal power voltage reaches its maximum value. The word line voltage regulator begins generating programming voltages at an earlier stage (when power voltage is at intermediate levels), rather than waiting for full voltage establishment. This overlaps the voltage ramp-up process with the programming process, reducing total program time while maintaining sufficient voltage for effective programming.
2Reliability
If the incremental step pulse is output after the internal power voltage reaches maximum value, then the programming operation is reliable, but the latency increases
Solution Approach 1:
The system performs preliminary action by initiating the word line voltage regulation process before the power voltage is fully established. The word line voltage regulator starts generating incremental step pulses during the power voltage ramp-up phase, rather than waiting for completion. This reduces latency by overlapping the voltage establishment time with the programming operation time.
3Stability of the object's composition
If the voltage generation circuit uses a conventional sequential approach (power voltage max first, then programming), then the voltage generation is stable, but the overall operation speed is slow
Solution Approach 1:
The patent implements preliminary action by starting the word line voltage generation process in advance, before the power voltage reaches its maximum value. The word line voltage regulator begins producing incremental step pulses during the power voltage ramp-up phase, effectively overlapping these two time-consuming processes. This reduces total operation time while the voltage regulator maintains stable output through its feedback control mechanism.
Solution Approach 2:
The system applies continuity of useful action by ensuring that the word line voltage regulator continues to generate programming voltages throughout the entire power voltage ramp-up period and into the programming phase. Rather than having idle time between power voltage establishment and programming start, the useful action of voltage generation is continuous, maximizing resource utilization and reducing total operation time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the program time by outputting the incremental step pulse earlier, thereby decreasing the latency and enhancing the performance of the flash memory device by allowing the high voltage to be used effectively before reaching its maximum value.
Implementation Method 1
a high voltage generator configured to increase an internal power voltage from a first voltage to a second voltage which is higher than the first voltage
Implementation Method 2
a word line voltage regulator configured to generate an incremental step pulse based on the internal power voltage
Implementation Method 3
a column selection voltage switch configured to output a column selection voltage for selecting a bit line based on the internal power voltage
Data Source
AI summary
A voltage generation circuit of a flash memory device includes a high voltage generator, a word line voltage generator, and a column selection voltage switch. The high voltage generator is configured to increase an internal power voltage from a first voltage to a second voltage which is higher than the first voltage. The word line voltage regulator is configured to generate an incremental step pulse based on the internal power voltage, where the incremental step pulse is output as a word line program voltage before the internal power voltage reaches the second voltage. The column selection voltage switch is configured to output a column selection voltage for selecting a bit line based on the internal power voltage.