Flash Memory Wear-Leveling Using ECC Read Error Feedback
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Solution Overview
Problem
Non-volatile solid state memory devices face limitations in endurance due to finite write/erase cycles and data retention challenges, which are not adequately addressed by existing wear-leveling techniques, especially in applications requiring high reliability.
Innovation Solution
A method and device for managing non-volatile solid state memory by monitoring error occurrences during read operations and implementing wear-leveling based on error correction codes, allowing for dynamic adjustment of block usage and identifying blocks nearing end of life to prevent data loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of stationary object
If traditional wear-leveling techniques are used to balance write/erase cycles, then the lifespan of flash memory is extended, but data retention reliability is not adequately improved
Solution Approach 1:
The patent implements feedback by monitoring error occurrences during read operations and using this information to dynamically adjust wear-leveling strategies. The controller tracks error rates per block and modifies programming operations based on real-time error data, creating a closed-loop system that adapts to actual memory degradation patterns rather than relying solely on static cycle counters.
Solution Approach 2:
The patent replaces traditional mechanical counting methods (per-block write counters) with an error-monitoring approach that uses error-correcting codes and statistical analysis of read errors to assess block health. This substitution allows the system to detect actual data retention issues without relying on approximate cycle counts, improving reliability detection accuracy.
2Productivity
If per-block counters are used to track write operations, then wear-leveling is achieved, but device complexity increases
Solution Approach 1:
The patent extracts the essential function of wear-leveling from complex per-block counter mechanisms and implements it through error-monitoring during read operations. By taking out the need for continuous counter maintenance and focusing only on error detection and analysis, the system achieves wear-leveling effectiveness with reduced controller complexity.
Solution Approach 2:
The patent enables the memory system to self-assess its own health status through error monitoring during normal read operations. The system uses its own operational data (read errors) to automatically adjust programming strategies, eliminating the need for external monitoring or complex management infrastructure.
3Reliability
If error monitoring and dynamic wear-leveling are implemented, then data loss is prevented, but read operation time increases
Solution Approach 1:
The patent implements periodic error monitoring during read operations rather than continuous intervention. The controller periodically checks error rates and adjusts wear-leveling strategies based on accumulated error data, allowing normal read operations to proceed efficiently while maintaining reliability through periodic health assessments rather than constant processing delays.
Data Source
AI summary
A computer-implemented method of managing a memory of a non-volatile solid state memory device by balancing write/erase cycles among blocks to level block usage. The method includes: monitoring an occurrence of an error during a read operation in a memory unit of the device, wherein the error is correctable by error-correcting code; and programming the memory unit according to the monitored occurrence of the error; wherein the step of monitoring the occurrence of an error is carried out for at least one block; and wherein said step of programming comprises wear-leveling the monitored block according the error monitored for the monitored block. A computer system and a computer program-product is also provided.The non-volatile solid state memory device includes: a memory unit having data stored therein; and a controller with a logic for programming the memory unit according to a monitored occurrence of an error during a read operation. The method includes: monitoring an occurrence of an error during a read operation in a memory unit of the device; and programming the memory unit according to the monitored occurrence of the error.