Flash Page Write Sequencing for Coherent TLC and QLC Storage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increasing variety of flash memory types and page sizes poses challenges for solid-state drives and solid state storages, which are often designed for a single vendor and type, leading to potential redesign or obsolescence when different types or vendors are used.
Innovation Solution
A method and system for managing page writes in triple level cell or higher level cell flash memory, involving data accumulation in RAM to satisfy page write requirements and performing atomic writes to ensure read data coherency, using a write sequencer and processor to handle data sequencing without relying on flash memory controllers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If storage systems are designed for a single vendor and type of flash memory, then device complexity is reduced and ease of manufacture is improved, but adaptability deteriorates when different types or vendors are used
Solution Approach 1:
The storage system is designed with a universal controller that can manage multiple types of flash memory (SLC, MLC, TLC, QLC) from different vendors. The controller includes a page write requirement manager that adapts to various page sizes and write requirements, allowing the same hardware platform to serve multiple flash memory configurations without redesign.
Solution Approach 2:
The system dynamically adjusts operational parameters based on the detected flash memory type. The controller identifies the specific flash memory configuration and modifies page write requirements, buffer allocation, and sequencing parameters accordingly. This allows the storage system to optimize performance for each flash memory type while using the same underlying hardware architecture.
2Manufacturing precision
If flash memory page write requirements are enforced at the client level, then manufacturing precision for data coherency is improved, but device complexity increases and ease of operation deteriorates
Solution Approach 1:
The patent extracts the complexity of managing page write requirements from the client system and relocates it to the storage system controller. The client issues simple write requests without needing to understand flash memory specifics, while the controller's page write requirement manager handles the complex sequencing and coordination of writes across multiple pages to ensure data coherency.
Solution Approach 2:
The controller acts as an intermediary between the client and flash memory, translating high-level write requests into coordinated page-level operations. The page write requirement manager mediates between the client's data write requests and the flash memory's specific page write requirements, buffer management, and sequencing needs, ensuring data coherency without exposing complexity to the client.
3Speed
If data is written directly to flash memory without accumulation in RAM, then speed is improved, but reliability deteriorates due to potential read data incoherency
Solution Approach 1:
The system performs preliminary accumulation of data in RAM buffers before writing to flash memory. The page write requirement manager collects data for multiple pages in the buffer, coordinates the write sequence, and ensures all necessary pages are prepared before initiating the flash write operation. This preliminary preparation ensures data coherency while maintaining efficient throughput.
Solution Approach 2:
The write operation is segmented into distinct phases: data accumulation in RAM buffers, sequencing and coordination by the page write requirement manager, and execution of atomic writes to flash memory. This segmentation allows the system to maintain fast RAM-based buffering while ensuring reliable coordinated writes to multiple flash pages, balancing speed and reliability.
Data Source
AI summary
A method for page writes for triple or higher level cell flash memory is provided. The method includes receiving data in a storage system, from a client that is agnostic of page write requirements for triple or higher level cell flash memory, wherein the page write requirements specify an amount of data and a sequence of writing data for a set of pages to assure read data coherency for the set of pages. The method includes accumulating the received data, in random-access memory (RAM) in the storage system to satisfy the page write requirements for the triple or higher level cell flash memory in the storage system. The method includes writing at least a portion of the accumulated data in accordance with the page write requirements, from the RAM to the triple level cell, or the higher level cell, flash memory in the storage system as an atomic write.