Flat Gate Electrode Segmentation to Prevent Contact Plug Shorts
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Solution Overview
Problem
As semiconductor devices become more integrated, electrical shorts between conductive structures increase, particularly due to the proximity of gate electrodes and contact plugs, necessitating a method to reduce electrical interference and shorts.
Innovation Solution
A method of manufacturing semiconductor devices involves forming a dummy gate structure, dividing it, replacing it with a gate structure, and removing portions to create division patterns, which helps in reducing electrical interference by ensuring a flat upper surface of the gate electrode, thereby minimizing shorts with neighboring contact plugs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the distance between gate electrode and contact plug is reduced to increase device integration, then device integration is improved, but electrical short and interference between gate electrode and contact plug increases
Solution Approach 1:
The gate electrode structure is divided into multiple segments with division patterns formed between adjacent gate electrodes. These division patterns create physical separations that prevent electrical shorts while allowing the gate electrodes to be positioned closer together for higher device integration.
Solution Approach 2:
Division patterns are introduced as intermediary structures between the gate electrode and contact plug. These intermediary division patterns act as isolation elements that prevent direct electrical contact while maintaining the reduced spacing needed for high integration.
2Reliability
If dummy gate structure is removed and replaced with gate structure, then functional gate electrode is formed, but protruding portions may form causing electrical interference
Solution Approach 1:
Division patterns are formed in the dummy gate structure before the dummy gate is removed and replaced with the functional gate structure. This preliminary formation of division patterns ensures that when the gate structure is formed, the division patterns are already in place to prevent protruding portions and maintain a flat upper surface.
Solution Approach 2:
The dummy gate structure is segmented by forming division patterns that create distinct regions. This segmentation allows for controlled removal and replacement processes that prevent the formation of protruding portions on the final gate electrode structure.
3Ease of manufacture
If gate electrode is formed with conventional methods, then gate structure is created, but protruding portions cause electrical interference with contact plugs
Solution Approach 1:
Division patterns are formed to segment the gate electrode structure, creating physical barriers that prevent protruding portions from causing electrical interference. This segmentation approach maintains ease of manufacture while solving the interference problem.
Solution Approach 2:
Division patterns are selectively formed in specific locations where protruding portions would cause interference with contact plugs. This local quality approach applies the division pattern structure only where needed to prevent electrical interference while maintaining overall manufacturing simplicity.
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a dummy gate structure on a substrate, partially removing the dummy gate structure to form a first opening that divides the dummy gate structure, forming a first division pattern structure in the first opening, replacing the dummy gate structure with a gate structure, removing the first division pattern structure to form a second opening, removing a portion of the gate structure from a sidewall of the second opening to enlarge the second opening, and forming a second division pattern in the enlarged second opening.