Flat Panel Detector Transistor Material Hybridization
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Solution Overview
Problem
The increasing refresh frequency of flat-panel detectors results in shorter turn-on times for transistors, leading to signal transmission delays due to the lower mobility of amorphous silicon, which reduces the accuracy of X-ray digital images.
Innovation Solution
The flat panel detector incorporates first transistors with low-temperature poly-silicon semiconductor materials or metallic oxide semiconductor materials and second transistors with amorphous silicon semiconductor materials, along with a storage capacitor and photoelectric detection devices, where the active layers of the first transistors are made of low-temperature poly-silicon or metallic oxide semiconductor materials and the second transistors are made of amorphous silicon, to control conduction and cut-off, reducing signal transmission delay.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the refresh frequency of flat-panel detectors is increased, then the frame rate is improved, but the turn-on time for transistors becomes shorter leading to signal transmission delays
Solution Approach 1:
The patent applies different semiconductor materials to different transistor types based on their specific functional requirements. First transistors (switching transistors) use low-temperature poly-silicon or metallic oxide semiconductor materials for fast switching, while second transistors (transfer transistors) use amorphous silicon semiconductor materials. This localized material selection optimizes signal transmission speed where needed without compromising overall detector performance or increasing complexity uniformly across the entire device.
2Ease of manufacture
If amorphous silicon semiconductor materials are used for transistor active layers, then the manufacturing process is simplified, but the mobility is lower causing signal transmission delays
Solution Approach 1:
The patent changes the material parameter (semiconductor type) specifically for first transistors from amorphous silicon to low-temperature poly-silicon or metallic oxide semiconductors. This parameter change increases carrier mobility and reduces signal transmission delay for switching operations, while maintaining amorphous silicon for second transistors to preserve manufacturing simplicity. The selective parameter change resolves the contradiction by applying material optimization only where performance is critical.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces signal transmission delay, improves the accuracy of X-ray digital images, and increases frame rate by using low-temperature poly-silicon or metallic oxide semiconductor materials for the first transistors and amorphous silicon for the second transistors, while maintaining a simple design and compatibility with manufacturing processes.
Implementation Method 1
the photodiodes convert the visible light into an electrical signal
Implementation Method 2
a scintillator on the surface of the flat panel detector converts X-rays that are attenuated after passing through a human body into visible light
Data Source
AI summary
The present disclosure provides a flat panel detector and a driving method thereof. A detection unit includes: a first transistor, a second transistor, a storage capacitor and a photoelectric detection device, and because an active layer of the second transistor is made of amorphous silicon semiconductor materials and an active layer of the first transistor is made of low-temperature poly-silicon semiconductor materials or metallic oxide semiconductor materials, transmission delay of an electric signal generated by the photoelectric detection device may be reduced by controlling conduction and cut-off of the first transistor and controlling conduction and cut-off of the second transistor.