Flat Panel Sensor Top-Gate TFT Structure Simplification
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Solution Overview
Problem
Conventional X-ray flat panel sensors have complex and costly fabrication processes due to the need for multiple layers and via holes, which increase production costs and complexity.
Innovation Solution
A top-gate TFT structure with a storage capacitor is used, where the first conductive layer is directly connected to the drain electrode and active layer, and the second conductive layer is connected to the ground line, with the third conductive layer connected to the first through a via hole, simplifying the process and reducing the number of insulating layers needed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple insulating layers and via holes are used to connect conductive layers, then electrical connection is achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent extracts and eliminates the need for complex multi-layer insulating structures and via holes by using a bottom-gate TFT configuration where the source electrode directly contacts the anode through a simplified contact structure, removing unnecessary intermediate layers while maintaining electrical connectivity
Solution Approach 2:
The patent inverts the conventional top-gate TFT structure to use a bottom-gate TFT structure, where the gate electrode is positioned at the bottom rather than the top. This inversion allows the source electrode to directly contact the anode without requiring complex insulating layers and via holes, simplifying the manufacturing process while achieving the same electrical connection function
2Reliability
If exposure and development processes are used to form via holes, then electrical connection is achieved, but manufacturing cost and process complexity increase
Solution Approach 1:
The patent removes the need for exposure and development processes by eliminating the via hole formation step entirely. The bottom-gate TFT structure allows direct contact between the source electrode and anode through a simplified contact structure, removing the requirement for photolithography-based via hole fabrication
Solution Approach 2:
The patent replaces expensive and time-consuming exposure and development processes with a simpler, more cost-effective direct contact structure that achieves the same electrical connection function without requiring costly photolithography materials and processing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces signal distortion, improves the signal-to-noise ratio, and lowers production costs by simplifying the fabrication process and reducing the number of insulating layers, thereby enhancing the overall performance and efficiency of the X-ray flat panel sensors.
Implementation Method 1
each of the pixel units includes one photodiode 11 and one thin film transistor (TFT) 12
Data Source
AI summary
A flat panel sensor and a flat panel detector are provided on the basis of a top-gate TFT structure. The flat panel sensor comprises a base substrate, and a top-gate TFT and a storage capacitor that are formed on the base substrate; the storage capacitor includes a first conductive layer, a second conductive layer disposed in opposition to the first conductive layer, a third conductive layer for output of an electric signal, and a ground line; the first conductive layer is directly connected to a drain electrode and an active layer of the top-gate TFT, the second conductive layer is directly connected to the ground line, and the third conductive layer is connected to the first conductive layer through a via hole.