Flexible Integrated Circuits with Elastomeric Dielectric
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Solution Overview
Problem
Conventional rigid electronics struggle to achieve high flexibility and performance due to brittleness and the presence of multi-silicon oxide layers in densely packed devices, which limits the flexibility of integrated circuits and electronic devices.
Innovation Solution
The development of flexible devices with a multilevel electronic structure where electronic components are electrically connected by an interconnect structure, and an elastomeric dielectric material is used to encase the interconnect structure, replacing rigid dielectric materials to enhance flexibility without compromising performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If rigid inorganic dielectric materials (such as SiO2 and SiNx) are used between interconnect levels, then electrical insulation and device performance are improved, but flexibility and bendability deteriorate due to brittleness at small bending radii
Solution Approach 1:
The patent changes the material parameter from rigid inorganic dielectric to soft elastomeric dielectric, fundamentally altering the mechanical properties while maintaining electrical functionality. This parameter change enables the interconnect structure to flex without cracking, resolving the contradiction between electrical insulation and flexibility
Solution Approach 2:
The patent uses composite material structures where elastomeric dielectric materials are combined with metal interconnect layers to create a flexible interconnect system. The composite structure leverages the electrical properties of the dielectric and the mechanical flexibility of the elastomeric material
2Productivity
If multilevel metal interconnections are densely packed to enhance device performance, then electrical connectivity and device speed are improved, but flexibility deteriorates due to the presence of multiple rigid dielectric layers
Solution Approach 1:
The patent changes the mechanical parameter of the dielectric material from rigid to soft elastomeric, allowing densely packed multilevel interconnections to maintain both high device speed and flexibility. The elastomeric material accommodates the complex interconnect geometry without introducing brittleness
3Strength
If rigid substrates are thinned to achieve flexibility, then some flexibility is improved, but mechanical robustness and handling reliability worsen due to brittleness and limited flexibility at wafer level
Solution Approach 1:
The patent changes the material parameter of the substrate from rigid (such as silicon) to soft elastomeric material, fundamentally improving both flexibility and mechanical robustness. The elastomeric substrate can be bent to small radii without cracking and maintains handling reliability, resolving the contradiction between flexibility and mechanical robustness
Data Source
AI summary
The present invention provides flexible devices, such as integrated circuits, having a multilevel electronic device structure including two or more electronic components. The electronic components within the structure are electrically connected by an interconnect structure having multiple interconnect levels. In addition to the multilevel electronic device structure, the flexible devices include an elastomeric material disposed around the interconnect levels, including within the spaces between the interconnect levels.