Flexible Device Light Reflective Layer Annealing Scorch Prevention

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Solution Overview

Problem

High energy light irradiation techniques used in thermal annealing for flexible devices can cause scorching of the substrate due to light absorption, leading to quality issues in semiconductor products.

Innovation Solution

A flexible device structure incorporating a light reflective layer with a reflection wavelength of 200 nm to 1100 nm and a reflection ratio greater than 80%, positioned within a buffer layer, which reflects irradiated light during thermal annealing, preventing substrate scorch and enhancing the annealing process efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high energy light irradiation techniques are used for thermal annealing, then manufacturing temperature is reduced and manufacturing time is reduced, but scorch of the flexible substrate occurs due to light absorption

Engineering Contradiction:

Improvemanufacturing timeVSAvoidsubstrate scorch

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent converts the harmful light absorption that causes substrate scorch into a beneficial reflection mechanism. By introducing a light reflective layer with specific optical properties (reflection ratio >80% for wavelengths 200-1100 nm), the previously harmful absorbed light energy is now reflected back to provide uniform heating during thermal annealing, eliminating substrate scorch while maintaining process efficiency

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The light reflective layer acts as an intermediary between the light source and the flexible substrate. This intermediate layer modifies the light interaction by reflecting harmful wavelengths while allowing beneficial thermal annealing effects to occur, thereby protecting the substrate from direct light-induced scorching during the high-energy irradiation process

Inventive Principle:

Principle #24Intermediary (Mediator)

2Temperature

If high energy light irradiation techniques are used for thermal annealing, then manufacturing temperature is reduced, but scorch of the flexible substrate occurs due to light absorption

Engineering Contradiction:

Improvemanufacturing temperatureVSAvoidsubstrate scorch

Core Design Contradiction:

TemperatureVSObject-affected harmful factors

Solution Approach 1:

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent changes the optical parameters of the device structure by introducing a light reflective layer with specific reflection characteristics (reflection ratio >80% for wavelengths 200-1100 nm). This parameter change modifies how light interacts with the substrate, transforming the low-temperature annealing process from one that causes scorching to one that provides uniform, controlled heating without substrate damage

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively prevents substrate scorching and improves the quality of flexible devices by enhancing the thermal annealing process, ensuring higher efficiency and quality of semiconductor products.

Implementation Method 1

the light reflective layer has a reflection wavelength of 200 nm ̃1100 nm, a reflection ratio of greater than 80%

Methodology Applied

Scientific EffectLight reflection: Reflection

Data Source

PatentUS9786790B2Flexible device

Publication Date: 2017.10.10 HANNSTAR DISPLAY CORP

AI summary

In one embodiment, a flexible device is provided. The flexible device may include a flexible substrate, a buffer layer, a light reflective layer, and a device layer. The buffer layer is located on the flexible substrate. The light reflective layer is located on the flexible substrate, wherein the light reflective layer has a reflection wavelength of 200 nm˜1100 nm, a reflection ratio of greater than 80%, and a stress direction of the light reflective layer is the same as a stress direction of the flexible substrate. The device layer is located on the light reflective layer and the buffer layer.