Flexible Die Reinforcement for Thin Semiconductor Package Reliability
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Solution Overview
Problem
Thinner semiconductor dies are prone to chipping, cracking, and failure due to thermomechanical stresses during manufacturing and operation, which can lead to yield loss and package failure.
Innovation Solution
A flexible reinforcement structure is coupled to the semiconductor die after thinning to provide support and protection, using materials like polyimide or copper, which can accommodate elastic and plastic deformation without fracturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the semiconductor die is thinned to reduce overall package thickness, then the package size is reduced, but the die becomes more prone to chipping, cracking, and thermomechanical stress failure
Solution Approach 1:
A flexible reinforcement structure is coupled to the thinned semiconductor die to provide mechanical support and protection. The flexible nature of this structure allows it to accommodate thermomechanical stresses and deformations without fracturing, thereby preventing chipping and cracking while maintaining the reduced package thickness.
Solution Approach 2:
The reinforcement structure is formed from a flexible material that may be the same as or different from the semiconductor die material. This composite approach combines the thin semiconductor die with a flexible reinforcement layer to achieve both reduced thickness and enhanced mechanical reliability.
2Volume of moving object
If the semiconductor die is thinned during manufacturing, then the overall device size is reduced, but the manufacturing precision required increases to prevent damage
Solution Approach 1:
The flexible reinforcement structure is coupled to the semiconductor die after thinning to provide immediate mechanical support. This preliminary reinforcement protects the thinned die during subsequent manufacturing steps, allowing standard processing precision to be maintained even with very thin dies.
Solution Approach 2:
The flexible reinforcement structure acts as a protective film that accommodates processing variations and prevents damage during manufacturing, reducing the stringency of precision requirements for handling thinned dies.
3Strength
If a rigid reinforcement structure is used to support thin dies, then mechanical strength is improved, but flexibility and ability to accommodate thermomechanical stress deteriorates
Solution Approach 1:
The reinforcement structure is specifically designed to be flexible rather than rigid. This flexibility allows the structure to deform elastically and plastically under thermomechanical stress, accommodating CPI stresses and thermal expansion/contraction while still providing mechanical support to prevent chipping and cracking.
Solution Approach 2:
The reinforcement structure is made from a flexible material with appropriate mechanical properties that allow it to change its physical state under stress. The material can undergo elastic and plastic deformation to accommodate thermomechanical stresses, maintaining both strength and adaptability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces chipping and cracking, enhances the reliability of thin semiconductor dies, and maintains operational integrity during manufacturing and use, enabling flexible electronics applications.
Implementation Method 1
using materials like polyimide or copper, which can accommodate elastic and plastic deformation without fracturing
Implementation Method 2
using materials like polyimide or copper, which can accommodate elastic and plastic deformation without fracturing
Data Source
AI summary
Methods for manufacturing semiconductor devices having a flexible reinforcement structure, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a semiconductor device includes electrically coupling at least one semiconductor die to a redistribution structure on a first carrier. The semiconductor die can include a first surface facing the redistribution structure and a second surface spaced apart from the redistribution structure. The method also includes reducing a thickness of the semiconductor die to no more than 10 μm. The method further includes coupling a flexible reinforcement structure to the second surface of the at least one semiconductor die.