Flexible Display Barrier Layer Segmentation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Flexible display panels face defects due to impurities and moisture infiltration, which are not effectively addressed by existing technologies, particularly in the bending areas where stress is high and can lead to fracture.

Innovation Solution

A flexible display panel design incorporating a barrier layer with alternately stacked silicon nitride and silicon oxide layers, each with specific thicknesses to provide plasticity and prevent fracture, and a buffer layer with similar layer structures to enhance thin film transistor properties and reduce bending stiffness, thereby minimizing defects and impurity/moisture ingress.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a barrier layer with alternately stacked silicon nitride and silicon oxide layers is used, then reliability is improved by preventing impurity and moisture infiltration, but device complexity increases due to multiple layered structures

Engineering Contradiction:
Improvedefect reductionVSAvoidlayer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The barrier layer is segmented into multiple thin alternating layers of silicon nitride and silicon oxide, where each layer has a thickness of less than or equal to about 400 Å and 650 Å respectively. This segmentation creates a multi-layered structure that effectively blocks impurity and moisture infiltration while managing stress distribution in bending areas

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The barrier layer employs a composite structure combining silicon nitride and silicon oxide materials in alternating layers. This composite approach leverages the complementary properties of both materials to achieve superior barrier performance and stress management compared to single-material layers

Inventive Principle:
Principle #40Composite materials

2Strength

If thin film layers with specific thicknesses are used in bending areas, then strength is improved by preventing fracture, but manufacturing precision requirements increase

Engineering Contradiction:
Improvefracture resistanceVSAvoidlayer thickness control
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The patent specifies precise thickness parameters for each layer (silicon nitride layers ≤400 Å, silicon oxide layers ≤650 Å) to optimize the balance between fracture resistance in bending areas and effective barrier performance. These parameter constraints ensure the barrier layer maintains both mechanical strength and protective function

Inventive Principle:
Principle #35Parameter changes

3Reliability

If a barrier layer structure is added to prevent impurity infiltration, then reliability is improved, but ease of manufacture decreases due to additional manufacturing steps

Engineering Contradiction:
Improveimpurity barrier performanceVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The barrier layer with its alternating silicon nitride and silicon oxide structure is formed preliminarily on the base member before subsequent pixel and functional layer fabrication. This preliminary barrier structure prevents impurity infiltration from the base member during subsequent manufacturing processes, protecting the underlying and subsequent layers

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS10964723B2Flexible display panel
Publication Date: 2021.03.30 SAMSUNG DISPLAY CO LTD
  • US10964723B2 patent drawing
  • US10964723B2 patent drawing
  • US10964723B2 patent drawing

AI summary

A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers and first silicon oxide layers which are overlapped with the bending area. The first silicon nitride layers and the first silicon oxide layers are stacked alternately. Each of the first silicon nitride layers may have a thickness less than or equal to about 400 Å, and each of the first silicon oxide layers may have a thickness less than or equal to about 650 Å.