Flexible Display Circuit Structure for Crack-Resistant Sub-Pixels

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Solution Overview

Problem

Conventional display apparatuses are vulnerable to external impacts and lack flexibility, leading to issues such as fine cracks and defects in the sub-pixel circuit areas, which can result in bright and dark spots during image display.

Innovation Solution

The display apparatus incorporates a substrate with a bottom metal layer that overlaps critical connection points between semiconductor layers, along with inorganic and organic insulating layers, and a valley structure in the insulating layers filled with organic material to enhance durability and flexibility, preventing fine cracks from propagating and reducing defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional display apparatus structures are used, then manufacturing is simpler, but the display apparatus is vulnerable to external impacts and develops fine cracks

Engineering Contradiction:
Improveresistance to external impactsVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the insulating layer structure by introducing a valley portion that divides the layer into distinct regions, allowing differential flexibility and crack propagation control in different areas of the display apparatus

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent adds a vertical dimension feature by creating a valley portion that extends in the thickness direction, transforming a planar insulating layer into a three-dimensional structure that provides both mechanical support and flexibility

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If rigid insulating layers are used, then manufacturing precision is improved, but flexibility and resistance to external impacts deteriorate

Engineering Contradiction:
Improvealignment precisionVSAvoidflexibility
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent applies local quality by creating a valley portion with different mechanical properties than the surrounding insulating layer, allowing the structure to have both rigid alignment features and flexible stress-absorbing regions in different locations

Inventive Principle:
Principle #3Local quality

3Reliability

If simple insulating layer structures are used, then device complexity is reduced, but fine cracks propagate easily causing bright and dark spots

Engineering Contradiction:
Improveimage quality consistencyVSAvoidinsulating layer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The valley portion acts as a pre-designed stress management feature that cushions and redistributes mechanical stress before it can propagate into fine cracks, preventing image defects before they occur

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The valley portion serves as an intermediary structure between the rigid substrate and the flexible display components, mediating stress transmission and preventing direct crack propagation through the insulating layer

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20230268465A1Display apparatus
Publication Date: 2023.08.24 SAMSUNG DISPLAY CO LTD
  • US20230268465A1 patent drawing
  • US20230268465A1 patent drawing
  • US20230268465A1 patent drawing

AI summary

A display apparatus includes a substrate, a first silicon-based transistor including a first semiconductor layer and a first gate electrode. The first semiconductor layer includes a silicon-based semiconductor, and the first gate electrode overlaps the first semiconductor layer, at least one insulating layer on the first gate electrode, a first oxide-based transistor including a semiconductor layer. The semiconductor layer includes an oxide-based semiconductor, a first connection electrode electrically connecting the first semiconductor layer to the semiconductor layer of the first oxide-based transistor, and a bottom metal layer disposed between the substrate and the first silicon-based transistor and overlapping a portion of the first semiconductor layer of the first silicon-based transistor. A portion of the bottom metal layer overlaps a first connection point between a portion of the first semiconductor layer and the first connection electrode.