Flexible Display Substrate Structure Blocking Hydrogen Ingress
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Solution Overview
Problem
Hydrogen permeation from the outside can make the channel region of oxide semiconductors in display devices conductive at undesired times, leading to degradation of transistor characteristics.
Innovation Solution
A display device with a first and second flexible substrate and an intermediate inorganic layer between them, incorporating different types of semiconductor patterns, including polycrystalline and oxide semiconductors, and utilizing blocking layers to prevent hydrogen ingress and charge inflow, thereby stabilizing transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductor is used in the channel region, then low power consumption and good uniformity are achieved, but hydrogen permeation makes the channel conductive at undesired times degrading transistor characteristics
Solution Approach 1:
A blocking layer made of silicon nitride or silicon oxide is introduced as an intermediary between the oxide semiconductor layer and the external environment. This blocking layer acts as a mediator that prevents hydrogen atoms from permeating into the oxide semiconductor channel region, thereby eliminating the harmful effect of hydrogen-induced conductivity changes while preserving the beneficial low power consumption and uniformity characteristics of oxide semiconductor transistors.
Solution Approach 2:
The transistor structure is enhanced by combining oxide semiconductor material with a blocking layer material (silicon nitride or silicon oxide) to form a composite structure. This composite approach allows the oxide semiconductor to provide low power consumption and good uniformity, while the blocking layer material provides hydrogen permeation resistance, achieving both benefits simultaneously without compromise.
2Adaptability or versatility
If different types of semiconductor patterns are used, then device functionality is improved, but manufacturing complexity increases
Solution Approach 1:
Different semiconductor materials are selectively applied to different regions of the transistor structure based on local functional requirements. The oxide semiconductor is used in the channel region where low power consumption and good uniformity are critical, while polycrystalline semiconductor is used in regions requiring high mobility. The blocking layer is applied specifically where hydrogen permeation prevention is needed. This localized approach enables diverse functionality without uniformly increasing complexity throughout the entire device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the stability and reliability of transistors, improving display quality by preventing unwanted conductivity changes and maintaining threshold voltage stability.
Implementation Method 1
hydrogen permeating from the outside can make the channel region of the oxide semiconductor conductive at undesired times
Data Source
AI summary
Provided is a display device. The display device comprises a first flexible substrate, a second flexible substrate including a first area, a second area, and a third area, and an intermediate layer between the first flexible substrate and the second flexible substrate. A plurality of pixels is disposed in the first area, and the plurality of pixels includes a first transistor including a polycrystalline semiconductor and a first gate electrode, a second transistor including an oxide semiconductor and a second gate electrode composed of a first metal layer, a second metal layer, and a third metal layer, and a third transistor including the polycrystalline semiconductor disposed in the second area, and a plurality of dams, a first line, a second line, and a cathode are disposed in the third area, and the cathode extends to the first area and the second area.