Flexible Display Sacrificial Layer Hydrogen Trap
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Solution Overview
Problem
Existing methods for manufacturing flexible display devices face challenges in maintaining the hydrogen concentration of sacrificial layers during high-temperature processes, leading to improper separation of the support layer from the carrier substrate and potential process defects.
Innovation Solution
Incorporating a hydrogen trap material like platinum, titanium, or palladium into the sacrificial layer, which adsorbs and releases hydrogen during laser irradiation, maintaining a constant hydrogen concentration and ensuring proper separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a sacrificial layer is used during high-temperature processes, then the support layer can be formed on a carrier substrate, but the hydrogen concentration in the sacrificial layer becomes unstable leading to improper separation
Solution Approach 1:
A hydrogen trap material (such as metal nanoparticles or hydrogen-absorbing compounds) is introduced as an intermediary substance within the sacrificial layer. This intermediary actively captures and holds hydrogen atoms that detach during high-temperature processing, preventing hydrogen loss and maintaining stable hydrogen concentration throughout the thermal process.
Solution Approach 2:
The chemical composition of the sacrificial layer is modified by incorporating hydrogen trap materials with specific properties. These materials undergo parameter changes (hydrogen absorption/desorption) in response to temperature variations, dynamically adjusting to maintain hydrogen concentration stability during the high-temperature process.
2Ease of manufacture
If the sacrificial layer loses hydrogen during high-temperature processing, then the manufacturing process simplifies, but the separation of the support layer from the carrier substrate becomes improper
Solution Approach 1:
The hydrogen trap material serves as a mediator that preserves the functional integrity of the sacrificial layer during simplified high-temperature processing. By incorporating this intermediary, the process remains simple while the separation quality is maintained through stable hydrogen concentration in the sacrificial layer.
3Temperature
If hydrogen is allowed to detach from the sacrificial layer, then the high-temperature process proceeds easily, but process defects occur
Solution Approach 1:
The potential harm of hydrogen detachment during high-temperature processing is converted into a benefit by introducing hydrogen trap materials. These materials capture the detaching hydrogen atoms, transforming what would be a harmful loss into a controlled interaction that maintains hydrogen concentration stability and prevents process defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach stabilizes the hydrogen concentration in the sacrificial layer, ensuring effective separation of the support layer from the carrier substrate and reducing process defects during the manufacturing of flexible display devices.
Implementation Method 1
The hydrogen trap material may adsorb hydrogen separated from the amorphous silicon during forming of the thin film transistor
Implementation Method 2
separating the support layer from the carrier substrate by irradiating a laser to the sacrificial layer
Implementation Method 3
the hydrogen adsorbed onto the hydrogen trap material may be separated from the hydrogen trap material during irradiating of the laser to the sacrificial layer
Data Source
AI summary
A method of manufacturing a flexible display device, the method including forming a sacrificial layer on a carrier substrate such that the sacrificial layer includes a hydrogen trap material and amorphous silicon; forming a support layer and a thin film transistor on the sacrificial layer; and separating the support layer from the carrier substrate by irradiating a laser to the sacrificial layer.