Flexible GaN Nanostructure Light Emitters for High-Contrast Displays
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Solution Overview
Problem
Current GaN-based light emitting diodes (LEDs) face limitations in high-resolution and high-contrast displays due to their rigidness and inefficiency, particularly when used for backlighting in LCDs, as they either increase display thickness or fail to enhance contrast.
Innovation Solution
The development of thin, flexible, and efficient light emitting structures using semiconductor nanostructures transferred from their host substrate to a new matrix, such as SiN x or SiO 2, allowing for improved electrical, thermal, and optical characteristics, enabling high-resolution, high-contrast, and low-power displays and lighting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If GaN-based LEDs are placed directly behind the display for backlighting, then contrast is improved, but display thickness increases and manufacturing cost increases
Solution Approach 1:
The patent extracts the light-emitting function from traditional rigid GaN-based LEDs by transferring GaN nanostructures from their original substrate to a flexible polymer substrate. This separation allows the light-emitting elements to be applied directly to the display surface, improving contrast while maintaining thin display profile
Solution Approach 2:
The patent employs a flexible polymer substrate to carry the transferred GaN nanostructures, creating a thin-film light-emitting layer that can be directly integrated into the display structure without adding significant thickness, thus resolving the contradiction between contrast improvement and thickness control
2Illumination intensity
If conventional GaN-based LEDs are used for backlighting, then lighting function is provided, but manufacturing complexity and cost increase due to additional layers and structures
Solution Approach 1:
The patent extracts only the essential light-emitting GaN nanostructures from the complex conventional LED structure, transferring them to a simple flexible polymer substrate. This eliminates the need for complex current distribution layers and other LED components, simplifying manufacturing while maintaining backlighting function
Solution Approach 2:
The patent replaces expensive and complex conventional LED structures with a simpler, more cost-effective solution using transferred GaN nanostructures on flexible substrate, reducing manufacturing complexity and cost while achieving the same backlighting function
3Length of stationary object
If GaN-based LEDs are used on edge with waveguiding, then display thickness is reduced, but contrast improvement is limited for high-resolution displays
Solution Approach 1:
Instead of placing LEDs on the edge and using waveguiding to distribute light, the patent inverts the approach by transferring light-emitting GaN nanostructures directly to the display surface where they provide localized backlighting, achieving both thin profile and high contrast for high-resolution displays
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the manufacture of high-quality, thin GaN-based light emitters with reduced defect density, allowing for high-resolution displays and efficient lighting without the need for current distribution layers like ITO, resulting in improved performance and cost-effectiveness.
Implementation Method 1
semiconductor nanostructures transferred from their host substrate to a new matrix
Implementation Method 2
GaN-based light emitting diodes (LEDs)
Implementation Method 3
light emitting structures
Data Source
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AI summary
A light emitting structure may include a light emitting element(s) arranged in a transparent dielectric material. The light emitting element(s) may include a semiconductor nanostructure arranged in a display orientation different from a growth orientation of the semiconductor nanostructure. The light emitting element(s) may also include a well layer on the semiconductor nanostructure. The light emitting element(s) may further include a capping layer on the well layer. The light emitting structure may also include a contact layer coupled to the light emitting element(s).